ALD110900APAL Advanced Linear Devices Inc, ALD110900APAL Datasheet - Page 8
ALD110900APAL
Manufacturer Part Number
ALD110900APAL
Description
MOSFET N-CH 10.6V DUAL 8PDIP
Manufacturer
Advanced Linear Devices Inc
Series
THRESHOLD™, EPAD®r
Datasheet
1.ALD110900APAL.pdf
(11 pages)
Specifications of ALD110900APAL
Package / Case
8-DIP (0.300", 7.62mm)
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Drain To Source Voltage (vdss)
10.6V
Vgs(th) (max) @ Id
10mV @ 1µA
Power - Max
500mW
Mounting Type
Through Hole
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
500 Ohm (Typ) @ 4 V
Forward Transconductance Gfs (max / Min)
0.0014 S
Drain-source Breakdown Voltage
10.6 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1030
ALD110800/ALD110800A/ALD110900/ALD110900A
S (45°)
e
S (45°)
D
L
H
b
A
SOIC-16 PACKAGE DRAWING
A
E
C
1
ø
16 Pin Plastic SOIC Package
Advanced Linear Devices
Dim
D-16
A
A
C
E
H
ø
S
b
e
L
1
1.35
0.10
0.35
0.18
9.80
3.50
5.70
0.60
0.25
Min
0°
Millimeters
1.27 BSC
10.00
0.937
Max
1.75
0.25
0.45
0.25
4.05
6.30
0.50
8°
0.053
0.004
0.014
0.007
0.385
0.140
0.224
0.024
0.010
Min
0°
0.050 BSC
Inches
0.069
0.010
0.018
0.010
0.394
0.160
0.248
0.037
0.020
8 of 11
Max
8°