ALD110908PAL Advanced Linear Devices Inc, ALD110908PAL Datasheet - Page 11
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ALD110908PAL
Manufacturer Part Number
ALD110908PAL
Description
MOSFET N-CH 10.6V DUAL 8PDIP
Manufacturer
Advanced Linear Devices Inc
Series
EPAD®r
Datasheet
1.ALD110908PAL.pdf
(11 pages)
Specifications of ALD110908PAL
Package / Case
8-DIP (0.300", 7.62mm)
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Drain To Source Voltage (vdss)
10.6V
Vgs(th) (max) @ Id
820mV @ 1µA
Power - Max
500mW
Mounting Type
Through Hole
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
500 Ohm (Typ) @ 4.8 V
Forward Transconductance Gfs (max / Min)
0.0014 S
Drain-source Breakdown Voltage
10.6 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1040
ALD110808/ALD110808A/ALD110908/ALD110908A
c
S
b
b
1
e
1
D
ø
e
A
E
A 2
1
PDIP-8 PACKAGE DRAWING
L
A
E 1
8 Pin Plastic DIP Package
Advanced Linear Devices
Dim
D-8
S-8
A
A
b
E
e
A
E
b
c
e
L
ø
1
1
1
1
2
3.81
0.38
1.27
0.89
0.38
0.20
9.40
5.59
7.62
2.29
7.37
2.79
1.02
Min
0°
Millimeters
11.68
Max
5.08
1.27
2.03
1.65
0.51
0.30
7.11
8.26
2.79
7.87
3.81
2.03
15°
0.105
0.015
0.050
0.035
0.015
0.008
0.370
0.220
0.300
0.090
0.290
0.110
0.040
Min
0°
Inches
0.200
0.050
0.080
0.065
0.020
0.012
0.460
0.280
0.325
0.110
0.310
0.150
0.080
11 of 11
Max
15°