ALD1106SBL Advanced Linear Devices Inc, ALD1106SBL Datasheet - Page 2

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ALD1106SBL

Manufacturer Part Number
ALD1106SBL
Description
MOSFET 2N-CH 13.2V QUAD 14SOIC
Manufacturer
Advanced Linear Devices Inc
Datasheet

Specifications of ALD1106SBL

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Drain To Source Voltage (vdss)
13.2V
Vgs(th) (max) @ Id
1V @ 1µA
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
14-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Other names
1014-1013
ALD1106/ALD1116
Transconductance
Gate Threshold
Voltage
Offset Voltage
V
Gate Threshold
Temperature
Drift
On Drain
Current
Mismatch
Output
Conductance
Drain Source
On Resistance
Drain Source
On Resistence
Mismatch
Drain Source
Breakdown
Voltage
Off Drain
Current
Gate Leakage
Current
Input
Capacitance
Notes:
OPERATING ELECTRICAL CHARACTERISTICS
T
Parameter
GS1
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, V
Gate-source voltage, V
Power dissipation
Operating temperature range
Storage temperature range
Lead temperature, 10 seconds
A
2
= 25 C unless otherwise specified
-V
GS2
1
1
2
Consists of junction leakage currents
Sample tested parameters
2
R
I
Symbol
BV
DS (OFF)
I
C
GSS
DS (ON)
DS (ON)
V
V
TC
I
G
G
ISS
DS (ON)
G
T
OS
DSS
IS
OS
VT
fs
GS
DS
Min
0.4
3.0
1.0
12
PA, SA, PB, SB package
DA, DB package
ALD1106
-1.2
200
350
Typ
0.7
4.8
1.8
0.5
0.5
0.1
10
2
1
Advanced Linear Devices
Max
500
400
1.0
10
10
4
1
3
Min
0.4
3.0
1.0
12
ALD1116
-1.2
200
350
Typ
0.7
4.8
1.8
0.5
0.5
0.1
10
2
1
500
400
Max
1.0
10
10
4
1
3
mV/ C
V
mV
mA
mmho V
%
%
V
pA
nA
pA
nA
pF
Unit
mho
I
I
V
V
V
V
I
V
T
V
T
DS
DS
DS
A
A
GS
DS
DS
DS
DS
DS
DS
-55 C to +125 C
-65 C to +150 C
= 1.0 A V
= 10 A V
= 1.0 A V
= 125 C
= 125 C
= 5V I
= 5V I
= 0.1V V
= 0.1V V
=12V V
= 0V V
= V
Conditions
0 C to +70 C
Test
DS
DS
DS
= 5V
GS
500 mW
GS
GS
+260 C
= 10mA
GS
GS
GS
GS
= 10mA
= 12V
13.2V
13.2V
= V
= 0V
= 5V
= 5V
= V
= 0V
DS
DS
2

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