ALD110908ASAL Advanced Linear Devices Inc, ALD110908ASAL Datasheet - Page 5
![MOSFET N-CH 10.6V DUAL 8SOIC](/photos/18/28/182897/8-soic_sml.jpg)
ALD110908ASAL
Manufacturer Part Number
ALD110908ASAL
Description
MOSFET N-CH 10.6V DUAL 8SOIC
Manufacturer
Advanced Linear Devices Inc
Series
EPAD®r
Datasheet
1.ALD110908PAL.pdf
(11 pages)
Specifications of ALD110908ASAL
Package / Case
8-SOIC (0.154", 3.90mm Width)
Fet Type
2 N-Channel (Dual)
Fet Feature
Standard
Drain To Source Voltage (vdss)
10.6V
Vgs(th) (max) @ Id
820mV @ 1µA
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
500 Ohm (Typ) @ 4.8 V
Forward Transconductance Gfs (max / Min)
0.0014 S
Drain-source Breakdown Voltage
10.6 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1039
ALD110808/ALD110808A/ALD110908/ALD110908A
100000
15
10
20
10000
5
0
1000
100
0.01
FORWARD TRANSFER CHARACTERISTICS
10
0.1
-4
5
4
2
3
0
1
1
-4
0
SUBTHRESHOLD FORWARD TRANSFER
V
T
T
V GS(TH) =-3.5V
-2
A
DS
A
= +25°C
= 25°C
V GS(TH) = +0.2V
= +10V
OUTPUT CHARACTERISTICS
-3
DRAIN-SOURCE ON VOLTAGE (V)
GATE-SOURCE VOLTAGE (V)
V DS =+0.1V
T A = +25°C
V GS(TH) =-1.3V
2
0
GATE-SOURCE VOLTAGE (V)
V GS(TH) = 0.0V
CHARACTERISTICS
-2
2
V GS(TH) = -0.4V
4
V GS(TH) =+0.2V
-1
4
V GS(TH) = -1.3V
V GS(TH) =0.0V
TYPICAL PERFORMANCE CHARACTERISTICS
6
V GS(TH) = +0.8V
V GS(TH) = -3.5V
6
0
V GS(TH) = +1.4V
V GS -V GS(TH) =+3V
V GS -V GS(TH) =+2V
V GS -V GS(TH) =+5V
V GS -V GS(TH) =+4V
V GS -V GS(TH) =+1V
V GS(TH) =+0.8V
8
8
1
10
2
10
Advanced Linear Devices
2500
2000
1500
1000
500
1000
2.5
2.0
1.5
1.0
0.5
0.01
100
0
0
0.1
10
10
1
V
-50
-0.5
T A = 25°C
SUBTHRESHOLD FORWARD TRANSFER
GS(th)
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
V
Slope = 110mV/decade
DS
-25
DRAIN-SOURCE ON CURRENT (µA)
V
=0.1V
TRANSCONDUCTANCE vs.
-0.4
GS(th)
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
~
GATE-SOURCE VOLTAGE (V)
CHARACTERISTICS
0
100
V
GS(th)
-0.3
25
V GS = V GS(TH) +4V
V
50
-0.2
GS(th)
V GS = V GS(TH) +6V
1000
75
V
-0.1
GS(th)
100
10000
V
125
GS(th)
5 of 11