ALD114904SAL Advanced Linear Devices Inc, ALD114904SAL Datasheet

ALD114904SAL

Manufacturer Part Number

ALD114904SAL

Description

MOSFET N-CH 10.6V DUAL 8SOIC

Manufacturer

Advanced Linear Devices Inc

Series

EPAD®r

Datasheet

1.ALD114904PAL.pdf (11 pages)

Specifications of ALD114904SAL

Package / Case

8-SOIC (0.154", 3.90mm Width)

Fet Type

2 N-Channel (Dual)

Fet Feature

Depletion Mode

Drain To Source Voltage (vdss)

10.6V

Vgs(th) (max) @ Id

360mV @ 1µA

Power - Max

500mW

Mounting Type

Surface Mount

Minimum Operating Temperature

0 C

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

500 Ohms

Forward Transconductance Gfs (max / Min)

0.0014 S

Drain-source Breakdown Voltage

10 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1064

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GENERAL DESCRIPTION

ALD114804/ALD114804A/ALD114904/ALD114904A are monolithic quad/dual

depletion mode N-Channel MOSFETS matched at the factory using ALD’s proven

EPAD® CMOS technology. These devices are intended for low voltage, small

signal applications. They are excellent functional replacements for normally-closed

relay applications, as they are normally on (conducting) without any power ap-

plied, but could be turned off or modulated when system power supply is turned

on. These MOSFETS have the unique characteristics of, when the gate is

grounded, operating in the resistance mode for low drain voltage levels and in

the current source mode for higher voltage levels and providing a constant drain

current.

ALD114804/ALD114804A/ALD114904/ALD114904A MOSFETS are designed for

exceptional device electrical characteristics matching. As these devices are on

the same monolithic chip, they also exhibit excellent temperature tracking char-

acteristics. They are versatile as design components for a broad range of analog

applications, such as basic building blocks for current sources, differential ampli-

fier input stages, transmission gates, and multiplexer applications.

Besides matched pair electrical characteristics, each individual MOSFET also

exhibits well controlled parameters, enabling the user to depend on tight design

limits corresponding to well matched characteristics.

These depletion mode devices are built for minimum offset voltage and differen-

tial thermal response, and they are suitable for switching and amplifying applica-

tions in single supply (0.4V to + 5V ) or dual supply (+/- 0.4V to +/-5V) systems

where low input bias current, low input capacitance and fast switching speed are

desired. These devices exhibit well controlled turn-off and sub-threshold

charactersitics and therefore can be used in designs that depend on sub-thresh-

old characteristics.

The ALD114804/ALD114804A/ALD114904/ALD114904A are suitable for use in

precision applications which require very high current gain, beta, such as current

mirrors and current sources. A sample calculation of the DC current gain at a

drain current of 3mA and gate input leakage current of 30pA = 100,000,000. It is

recommended that the user, for most applications, connect the V+ pin to the

most positive voltage and the V- and N/C pins to the most negative voltage in the

system. All other pins must have voltages within these voltage limits.

FEATURES

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -0.40V +/- 0.02V

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ALD114804ASCL ALD114804APCL ALD114904ASAL ALD114904APAL

ALD114804SCL

16-Pin

SOIC

Package

GS(th)

0°C to +70°C

match (V

DS(ON)

INEAR

DVANCED

EVICES,

ALD114804PCL

@ V

16-Pin

Plastic Dip

Package

) — 20mV

Operating Temperature Range*

=0.0V of 5.4KΩ

NC.

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

(“L” suffix for lead free version)

Ω typical

GS(th)

temperature coefficient

ALD114904SAL

SOIC

Package

8-Pin

MATCHED PAIR MOSFET ARRAY

0°C to +70°C

ALD114904PAL

www.aldinc.com

8-Pin

Plastic Dip

Package

ALD114804/ALD114804A/ALD114904/ALD114904A

APPLICATIONS

• Functional replacement of Form B (NC) relays

• Ultra low power (nanowatt) analog and digital

• Ultra low operating voltage (<0.2V) analog and

• Sub-threshold biased and operated circuits

• Zero power fail safe circuits in alarm systems

• Backup battery circuits

• Power failure and fail safe detector

• Source followers and high impedance buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Discrete analog switches and multiplexers

• Discrete voltage comparators

PIN CONFIGURATIONS

circuits

digital circuits

N/C*

*N/C pins are internally connected,

V -

SCL, PCL PACKAGES

SAL, PAL PACKAGES

connect to V-

M 1

M 4

ALD114904

ALD114804

M 1

V GS(th) = -0.40V

M 3

M 2

V -

N/C*

V -

N/C*

EPAD

Related parts for ALD114904SAL

ALD114904SAL Summary of contents

Page 1

... SOIC Plastic Dip Package Package ALD114904SAL ALD114904PAL www.aldinc.com V GS(th) = -0.40V APPLICATIONS • Functional replacement of Form B (NC) relays • Ultra low power (nanowatt) analog and digital circuits • Ultra low operating voltage (<0.2V) analog and digital circuits • ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-Source voltage Gate-Source voltage Power dissipation Operating temperature range SCL, PCL, SAL, PAL package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS + GND T A ...

Page 3

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) ...

Page 4

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage less. The threshold, or turn-on, voltage ...

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ALD114904SAL Advanced Linear Devices Inc, ALD114904SAL Datasheet

ALD114904SAL

Specifications of ALD114904SAL

Related parts for ALD114904SAL

ALD114904SAL Summary of contents

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