ALD114913PAL Advanced Linear Devices Inc, ALD114913PAL Datasheet

ALD114913PAL

Manufacturer Part Number

ALD114913PAL

Description

MOSFET N-CH 10.6V DUAL 8PDIP

Manufacturer

Advanced Linear Devices Inc

Series

EPAD®r

Datasheet

1.ALD114913PAL.pdf (11 pages)

Specifications of ALD114913PAL

Package / Case

8-DIP (0.300", 7.62mm)

Fet Type

2 N-Channel (Dual)

Fet Feature

Depletion Mode

Drain To Source Voltage (vdss)

10.6V

Vgs(th) (max) @ Id

1.26V @ 1µA

Power - Max

500mW

Mounting Type

Through Hole

Minimum Operating Temperature

0 C

Configuration

Dual

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

500 Ohm (Typ) @ 2.7 V

Forward Transconductance Gfs (max / Min)

0.0014 S

Drain-source Breakdown Voltage

10.6 V

Gate-source Breakdown Voltage

10.6 V

Continuous Drain Current

12 mA

Power Dissipation

500 mW

Maximum Operating Temperature

+ 70 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Gate Charge (qg) @ Vgs

Current - Continuous Drain (id) @ 25° C

Rds On (max) @ Id, Vgs

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

1014-1065

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GENERAL DESCRIPTION

ALD114813/ALD114913 are monolithic quad/dual depletion mode N-Channel

MOSFETS matched at the factory using ALD’s proven EPAD CMOS technology.

These devices are intended for low voltage, small signal applications. They are

excellent functional replacements for normally-closed relay applications, as they

are normally on (conducting) without any power applied, but could be turned off

or modulated when system power supply is turned on. These MOSFETS have

the unique characteristics of, when the gate is grounded, operating in the resis-

tance mode for low drain voltage levels and in the current source mode for higher

voltage levels and providing a constant drain current.

These MOSFETS are designed for exceptional device electrical characteristics

matching. As these devices are on the same monolithic chip, they also exhibit

excellent temperature tracking characteristics. They are versatile as design com-

ponents for a broad range of analog applications, and they are basic building

blocks for current sources, differential amplifier input stages, transmission gates,

and multiplexer applications. Besides matched pair electrical characteristics, each

individual MOSFET also exhibits well controlled parameters, enabling the user to

depend on tight design limits. Even units from different batches and different date

of manufacture have correspondingly well matched characteristics.

These depletion mode devices are built for minimum offset voltage and differen-

tial thermal response, and they are designed for switching and amplifying appli-

cations in single 1.5V to +/-5V systems where low input bias current, low input

capacitance and fast switching speed are desired. These devices exhibit well

controlled turn-off and sub-threshold charactersitics and therefore can be used in

designs that depend on sub-threshold characteristics.

The ALD114813/ALD114913 are suitable for use in precision applications which

require very high current gain, beta, such as current mirrors and current sources.

A sample calculation of the DC current gain at a drain current of 3mA and gate

input leakage current of 30pA = 100,000,000. It is recommended that the user, for

most applications, connect the V+ pin to the most positive voltage and the V- and

N/C pins to the most negative voltage in the system. All other pins must have

voltages within these voltage limits.

ORDERING INFORMATION

* Contact factory for industrial temp. range or user-specified threshold voltage values

FEATURES

• Depletion mode (normally ON)

• Precision Gate Threshold Voltages: -1.30V +/- 0.04V

• Nominal R

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• V

• High input impedance — 10

• Positive, zero, and negative V

• DC current gain >10

• Low input and output leakage currents

ALD114813SCL ALD114813PCL ALD114913SAL ALD114913PAL

16-Pin

SOIC

Package

GS(th)

0°C to +70°C

match (V

DS(ON)

INEAR

DVANCED

EVICES,

16-Pin

Plastic Dip

Package

Operating Temperature Range*

) — 20mV

=0.0V of 1.3KΩ

NC.

QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD®

(“L” suffix for lead free version)

Ω typical

GS(th)

temperature coefficient

SOIC

Package

8-Pin

MATCHED PAIR MOSFET ARRAY

0°C to +70°C

Plastic Dip

Package

8-Pin

www.aldinc.com

APPLICATIONS

• Functional replacement of Form B (NC) relays

• Ultra low power (nanowatt) analog and digital

• Ultra low operating voltage (<0.2V) analog and

• Sub-threshold biased and operated circuits

• Zero power fail safe circuits in alarm systems

• Backup battery circuits

• Power failure and fail safe detector

• Source followers and high impedance buffers

• Precision current mirrors and current sources

• Capacitives probes and sensor interfaces

• Charge detectors and charge integrators

• Differential amplifier input stage

• High side switches

• Peak detectors and level shifters

• Sample and Hold

• Current multipliers

• Discrete analog switches and multiplexers

• Discrete voltage comparators

PIN CONFIGURATIONS

circuits

digital circuits

N/C*

*N/C pins are internally connected,

SCL, PCL PACKAGES

SAL, PAL PACKAGES

V -

ALD114813/ALD114913

connect to V-

ALD114913

M 1

M 4

ALD114813

M 1

V GS(th) = -1.30V

M 3

M 2

V -

N/C*

V -

N/C*

EPAD

Related parts for ALD114913PAL

ALD114913PAL Summary of contents

Page 1

... SOIC Plastic Dip Package Package ALD114813SCL ALD114813PCL ALD114913SAL ALD114913PAL * Contact factory for industrial temp. range or user-specified threshold voltage values Rev 2.0 ©2010 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 MATCHED PAIR MOSFET ARRAY temperature coefficient 0° ...

Page 2

ABSOLUTE MAXIMUM RATINGS Drain-Source voltage Gate-Source voltage Power dissipation Operating temperature range SCL, PCL, SAL, PAL package Storage temperature range Lead temperature, 10 seconds OPERATING ELECTRICAL CHARACTERISTICS + GND T A ...

Page 3

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. ALD’s Electrically Programmable Analog Device (EPAD) ...

Page 4

PERFORMANCE CHARACTERISTICS OF EPAD® MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage less. The threshold, or turn-on, voltage ...

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ALD114913PAL Advanced Linear Devices Inc, ALD114913PAL Datasheet

ALD114913PAL

Specifications of ALD114913PAL

Related parts for ALD114913PAL

ALD114913PAL Summary of contents

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