ALD114913SAL Advanced Linear Devices Inc, ALD114913SAL Datasheet - Page 2
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ALD114913SAL
Manufacturer Part Number
ALD114913SAL
Description
MOSFET N-CH 10.6V DUAL 8SOIC
Manufacturer
Advanced Linear Devices Inc
Series
EPAD®r
Datasheet
1.ALD114913PAL.pdf
(11 pages)
Specifications of ALD114913SAL
Package / Case
8-SOIC (0.154", 3.90mm Width)
Fet Type
2 N-Channel (Dual)
Fet Feature
Depletion Mode
Drain To Source Voltage (vdss)
10.6V
Vgs(th) (max) @ Id
1.26V @ 1µA
Power - Max
500mW
Mounting Type
Surface Mount
Minimum Operating Temperature
0 C
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
500 Ohm (Typ) @ 2.7 V
Forward Transconductance Gfs (max / Min)
0.0014 S
Drain-source Breakdown Voltage
10.6 V
Gate-source Breakdown Voltage
10.6 V
Continuous Drain Current
12 mA
Power Dissipation
500 mW
Maximum Operating Temperature
+ 70 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Current - Continuous Drain (id) @ 25° C
-
Rds On (max) @ Id, Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
1014-1066
ABSOLUTE MAXIMUM RATINGS
Drain-Source voltage,
Gate-Source voltage,
Power dissipation
Operating temperature range SCL, PCL, SAL, PAL package
Storage temperature range
Lead temperature, 10 seconds
OPERATING ELECTRICAL CHARACTERISTICS
V + = +5V V- = GND T A = 25
CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
Notes:
ALD114813/ALD114913
Gate Threshold Voltage
Offset Voltage
V GS(th)1 -V GS(th)2
Offset Voltage Tempco
GateThreshold Voltage Tempco
On Drain Current
Forward Transconductance
Transconductance Mismatch
Output Conductance
Drain Source On Resistance
Drain Source On Resistance
Drain Source On Resistance
Tolerance
Drain Source On Resistance
Mismatch
Drain Source Breakdown
Voltage
Drain Source Leakage Current
Gate Leakage Current
Input Capacitance
Transfer Reverse Capacitance
Turn-on Delay Time
Turn-off Delay Time
Crosstalk
Parameter
1
Consists of junction leakage currents
1
V
V
GS
DS
1
°
V GS(th)
V OS
TC VOS
TC VGS(th)
I DS (ON)
G FS
∆G FS
G OS
R DS (ON)
R DS (ON)
∆R DS (ON)
∆R DS (ON)
BV DSX
I DS (OFF)
I GSS
C ISS
C RSS
t on
t off
C unless otherwise specified
Symbol
-1.34
Min
10
Advanced Linear Devices
ALD114813/ALD114913
-1.30
+1.6
12.0
-1.7
500
0.0
3.0
1.4
1.8
1.3
0.5
2.5
0.1
Typ
68
10
10
10
60
7
5
7
3
-1.26
400
200
Max
20
4
1
V
mV
µV/ °C
mV/ °C
mA
mmho
%
µmho
Ω
KΩ
%
%
V
pA
nA
pA
nA
pF
pF
ns
ns
dB
Unit
-65°C to +150°C
0°C to +70°C
500 mW
+260°C
I DS =1µA, V DS = 0.1V
I DS =1µA
V DS1 = V DS2
I D = 1µA, V DS = 0.1V
I D = 20µA, V DS = 0.1V
I D = 40µA, V DS = 0.1V
V GS = +8.2 V, V DS = +5V
V GS = +2.7V, V DS = +5V
V GS = +2.7V
V DS = +7.7V
V GS =+2.7V
V DS = +7.7V
V DS = 0.1V
V GS = +2.7V
V DS = 0.1V
V GS = +0.0V
I DS = 1.0µA
V GS = -2.3V
V GS =-2.3V, V DS =+5V
T A = 125°C
V DS = 0V, V GS = +5V
T A =125°C
V + = 5V R L = 5KΩ
V + = 5V R L = 5KΩ
f = 100KHz
10.6V
10.6V
Test Conditions
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