ALD114904ASAL Advanced Linear Devices Inc, ALD114904ASAL Datasheet - Page 7

• Manufacturer Part Number: ALD114904ASAL
• Description: MOSFET N-CH 10.6V DUAL 8SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD114904ASAL

• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Depletion Mode
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 380mV @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 3.6 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1062

ALD114804/ALD114804A/ALD114904/ALD114904A
ZERO TEMPERETURE COEFFICIENT CHARACTERISTIC
-2.5
2.5
-0.3
-0.2
-0.4
-0.1
-5
0.3
0.2
0.1
0.0
0.6
5
0
1.2
0.9
0.3
0.2
0.6
0.5
0.3
0.0
DRAIN - GATE DIODE CONNECTED VOLTAGE
0
10000
TEMPCO vs. DRAIN SOURCE ON CURRENT
1
TRANCONDUCTANCE vs. DRAIN-SOURCE
0
0.1
-55°C ≤ T
V
T
DS
A
V GS(TH) =-3.5V
NORMALIZED SUBTHRESHOLD
CHARACTERISTICS RELATIVE
= 25°C
GATE THRESHOLD VOLTAGE
1000
DRAIN SOURCE ON CURRENT (µA)
DRAIN -SOURCE ON CURRENT(mA)
= +10V
DRAIN-SOURCE CURRENT (nA)
DRAIN-SOURCE ON VOLTAGE (V)
2
55°C
V GS(TH) =-1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V
0.2
A
10
≤ +125°C
ON CURRENT
100
4
0.5
100
10
TYPICAL PERFORMANCE CHARACTERISTICS
6
1.0
25°C
V
D
= 0.1V
1
1000
8
2.0
0.1
10
5.0
Advanced Linear Devices
4.0
3.0
2.0
1.0
1.6
1.2
0.8
0.4
0.0
-1.0
-2.0
-3.0
-4.0
-0.5
1.0
0.0
2.0
2.5
2.0
1.5
0.5
1.0
0.0
100000 10000
0
-50
-4
V GS(TH) = +0.2V
-25
SUBTHRESHOLD CHARACTERISTICS
V
t
V GS(TH) = 0.0V
V
TRANSFER CHARACTERISTICS
T
-25
-2
= 0.0V
DS
A
vs. AMBIENT TEMPERATURES
= 25°C
THRESHOLD VOLTAGE vs.
DRAIN -SOURCE CURRENT (nA)
= +10V
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
AMBIENT TEMPERATURE (
V GS(TH) = -0.4V
55°C
THRESHOLD VOLTAGES
GATE-SOURCE VOLTAGE (V)
0
0
1000
25
V
V
V
t
V GS(th) = -3.5V
2
25
DS
GS(th)
= 0.2V
V GS(th) = -0.4V
V GS(th) = 0.0V
V GS(th) = -1.3V
100
= +0.1V I
V GS(TH) = -3.5V
= 0.2V
4
50
V GS(TH) = +0.8V
25°C
10
D
V GS(TH) = -1.3V
75
6
75
V
= 1.0
V GS(TH) = +1.4V
GS(th)
V
V
O
V
t
C)
µA
I DS = +1µA
V DS = +0.1V
t
= 0.4V
t
1
= 1.4V
100
8
= 0.8V
= 0.4V
10
0.1
125
125
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