ALD114804ASCL Advanced Linear Devices Inc, ALD114804ASCL Datasheet - Page 5

• Manufacturer Part Number: ALD114804ASCL
• Description: MOSFET N-CH 10.6V QUAD 16SOIC
• Manufacturer: Advanced Linear Devices Inc
• Series: EPAD®r

Specifications of ALD114804ASCL

• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Depletion Mode
• Drain To Source Voltage (vdss): 10.6V
• Vgs(th) (max) @ Id: 380mV @ 1µA
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: 0 C
• Configuration: Quad
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 500 Ohm (Typ) @ 3.6 V
• Forward Transconductance Gfs (max / Min): 0.0014 S
• Drain-source Breakdown Voltage: 10.6 V
• Gate-source Breakdown Voltage: 10.6 V
• Continuous Drain Current: 12 mA
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Current - Continuous Drain (id) @ 25° C: -
• Rds On (max) @ Id, Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 1014-1054

ALD114804/ALD114804A/ALD114904/ALD114904A
100000
15
10
20
10000
5
0
1000
100
0.01
FORWARD TRANSFER CHARACTERISTICS
10
0.1
-4
5
4
2
3
0
1
1
-4
0
SUBTHRESHOLD FORWARD TRANSFER
V
T
T
V GS(TH) =-3.5V
-2
A
DS
A
= +25°C
= 25°C
V GS(TH) = +0.2V
= +10V
OUTPUT CHARACTERISTICS
-3
DRAIN-SOURCE ON VOLTAGE (V)
GATE-SOURCE VOLTAGE (V)
V DS =+0.1V
T A = +25°C
V GS(TH) =-1.3V
2
0
GATE-SOURCE VOLTAGE (V)
V GS(TH) = 0.0V
CHARACTERISTICS
-2
2
V GS(TH) = -0.4V
4
V GS(TH) =+0.2V
-1
4
V GS(TH) = -1.3V
V GS(TH) =0.0V
TYPICAL PERFORMANCE CHARACTERISTICS
6
V GS(TH) = +0.8V
V GS(TH) = -3.5V
6
0
V GS(TH) = +1.4V
V GS -V GS(TH) =+3V
V GS -V GS(TH) =+2V
V GS -V GS(TH) =+5V
V GS -V GS(TH) =+4V
V GS -V GS(TH) =+1V
V GS(TH) =+0.8V
8
8
1
10
2
10
Advanced Linear Devices
2500
2000
1500
1000
500
1000
2.5
2.0
1.5
1.0
0.5
0.01
0
100
0
0.1
10
10
1
V
-50
-0.5
T A = 25°C
GS(th)
SUBTHRESHOLD FORWARD TRANSFER
DRAIN-SOURCE ON RESISTANCE
vs. DRAIN-SOURCE ON CURRENT
V
Slope = 110mV/decade
DS
-25
DRAIN-SOURCE ON CURRENT (µA)
=0.1V
V
TRANSCONDUCTANCE vs.
-0.4
GS(th)
AMBIENT TEMPERATURE
AMBIENT TEMPERATURE (°C)
~
GATE-SOURCE VOLTAGE (V)
CHARACTERISTICS
0
100
V
GS(th)
-0.3
25
V GS = V GS(TH) +4V
50
V
-0.2
GS(th)
V GS = V GS(TH) +6V
1000
75
V
-0.1
GS(th)
100
10000
V
125
GS(th)
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