SI4501ADY-T1-GE3 Vishay, SI4501ADY-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI4501ADY-T1-GE3
• Description: MOSFET N/P-CH 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4501ADY-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V, 8V
• Current - Continuous Drain (id) @ 25° C: 6.3A, 4.1A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N And P Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 42mohm
• Rds(on) Test Voltage Vgs: 10V
• Power Dissipation Pd: 1.3W
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4501ADY-T1-GE3TR

Si4501ADY
Vishay Siliconix
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
a
b
b
b
J
= 25 °C, unless otherwise noted
b
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
t
t
SD
t
rr
gd
fs
gs
r
f
g
V
I
D
V
V
V
DS
I
D
DS
DS
DS
≅ - 1 A, V
≅ 1 A, V
I
= - 4 V, V
V
V
V
F
V
V
V
= 30 V, V
= - 8 V, V
V
= 15 V, V
V
DS
GS
V
GS
V
DS
V
V
V
V
I
= 1.8 A, dI/dt = 100 A/µs
V
DS
DS
V
S
DS
I
DS
GS
S
DD
DS
DS
DS
DS
GS
DD
= - 1.8 A, V
= - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= 1.8 A, V
= - 15 V, I
= 0 V, V
= V
= 0 V, V
= 4.5 V, I
= 30 V, V
= - 8 V, V
= 5 V, V
= 15 V, R
= 10 V, I
= 15 V, I
= - 4 V, R
GEN
N-Channel
P-Channel
N-Channel
GEN
P-Channel
GS
Test Conditions
GS
GS
GS
GS
GS
, I
, I
= - 5 V, I
= - 4.5 V, R
= 10 V, R
D
= 0 V, T
= 0 V, T
GS
= 5 V, I
D
GS
GS
GS
= - 250 µA
D
D
D
GS
D
D
D
= 250 µA
GS
GS
GS
L
L
= ± 20 V
= 8.8 A
= 8.8 A
= - 5.7 A
= - 4.5 V
= - 5.7 A
= 7.0 A
= - 4.8 A
= ± 8 V
= 10 V
= 15 Ω
= 0 V
= 4 Ω
= 0 V
= 0 V
= 0 V
D
D
J
J
G
= 55 °C
= 55 °C
= 8.8 A
= - 5.7 A
g
= 6 Ω
= 6 Ω
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
- 0.45
Min.
- 20
0.8
30
S09-0868-Rev. D, 18-May-09
0.015
0.030
0.022
0.048
- 0.75
Typ.
0.73
11.5
13.5
Document Number: 71922
2.2
12
21
45
60
55
50
18
15
35
10
30
3
4
3
8
a
± 100
± 100
0.018
0.042
0.027
0.060
Max.
- 1.0
- 1.1
100
100
1.8
1.1
- 1
- 5
20
20
22
40
15
70
50
20
85
60
1
5
Unit
µA
nC
nA
ns
V
A
Ω
S
V