SI6993DQ-T1-GE3 Vishay, SI6993DQ-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI6993DQ-T1-GE3
• Description: MOSFET P-CH D-S 30V 8-TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6993DQ-T1-GE3

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 4.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -4.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 48mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI6993DQ-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72369.
Document Number: 72369
S-81221-Rev. B, 02-Jun-08
0.01
0.1
2
1
10
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si6993DQ
www.vishay.com
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