SI4904DY-T1-GE3 Vishay, SI4904DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4904DY-T1-GE3
• Description: MOSFET N-CH 40V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4904DY-T1-GE3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 10V
• Input Capacitance (ciss) @ Vds: 2390pF @ 20V
• Power - Max: 3.25W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 19mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 2V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4904DY-T1-GE3TR

Si4904DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.1
20
10
0
- 50
1
0.0
I
D
I
Source-Drain Diode Forward Voltage
D
- 25
= 5 mA
= 250 µA
0.2
V
SD
0
T
– Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
J
= 150 °C
– Temperature (°C)
25
0.6
50
75
0.8
T
0.01
100
J
0.1
10
100
= 25 °C
1
0.1
Limited by R
* V
Safe Operating Area, Junction-to-Ambient
1.0
GS
125
V
minimum V
1.2
150
DS
DS(on)
– Drain-to-Source Voltage (V)
Single Pulse
1
T
*
A
GS
= 25 °C
at which R
DS(on)
0.10
0.08
0.06
0.04
0.02
10
50
40
30
20
10
0
0.001
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
100 ms
1 ms
10 ms
1 s
10 s
DC
2
0.01
V
100
GS
3
– Gate-to-Source Voltage (V)
4
Time (s)
T
T
A
A
0.1
= 25 °C
5
= 125 °C
S09-0540-Rev. C, 06-Apr-09
Document Number: 73793
6
7
I
D
1
= 5 A
8
9
10
10