NTD4960N-1G ON Semiconductor

MOSFET N-CH 30V 11.1A IPAK

NTD4960N-1G

Manufacturer Part Number

NTD4960N-1G

Description

MOSFET N-CH 30V 11.1A IPAK

Manufacturer

ON Semiconductor

Specifications of NTD4960N-1G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

8.9A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

22nC @ 10V

Input Capacitance (ciss) @ Vds

1300pF @ 15V

Power - Max

1.07W

Mounting Type

Through Hole

Package / Case

TO-251-3 Long Leads, IPak, TO-251AB

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.1 mOhms

Forward Transconductance Gfs (max / Min)

48 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

11.1 A

Power Dissipation

1.68 W

Maximum Operating Temperature

+ 85 C

Mounting Style

Through Hole

Fall Time

4 ns

Gate Charge Qg

11 nC

Rise Time

20 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTD4960N-1GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4960N-1G

Manufacturer:

ON

Quantity:

1 950

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4960N-1G

Manufacturer:

ON

Quantity:

12 500

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