IRF7401 International Rectifier, IRF7401 Datasheet - Page 7

• Manufacturer Part Number: IRF7401
• Description: MOSFET N-CH 20V 8.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7401

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 4.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 8.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1600pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7401

V
GS
Re-Applied
Voltage
*
Reverse
Recovery
Current

*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
‚
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Fig 13. For N-Channel HEXFETS
Waveform
Waveform
Peak Diode Recovery dv/dt Test Circuit
Ripple
Body Diode
Period
**
Body Diode Forward
+
-
ƒ
dv/dt controlled by R
I
D.U.T. - Device Under Test
SD
Diode Recovery
5%
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D =
-
G
Period
„
P.W.
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
DD
] ***
*
IRF7401