SUD09P10-195-GE3 Vishay, SUD09P10-195-GE3 Datasheet - Page 5

• Manufacturer Part Number: SUD09P10-195-GE3
• Description: MOSFET P-CH 100V DPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD09P10-195-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 195 mOhm @ 3.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 34.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 1055pF @ 50V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 0.162ohm
• Rds(on) Test Voltage Vgs: -10V
• Voltage Vgs Max: -20V
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SUD09P10-195-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65903.
Document Number: 65903
S10-0634-Rev. A, 22-Mar-10
100
10
Single Pulse Avalanche Current Capability vs. Time
1
10
0.1
-6
1
10
0.05
-4
0.1
Duty Cycle = 0.5
0.2
T
10
J
= 150 °C
-5
Single Pulse
10
-4
Time (s)
0.02
10
T
J
-3
10
= 25 °C
-3
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
10
Square Wave Pulse Duration (s)
-1
-2
0.01
100
0.1
10
1
0.1
* V
10
GS
Single Pulse
-1
T
A
> minimum V
= 25 °C
V
DS
- Drain-to-Source Voltage (V)
Safe Operating Area
1
Limited by R
GS
at which R
SUD09P10-195
1
DS(on)
BVDSS Limited
10
DS(on)
Vishay Siliconix
*
is specified
www.vishay.com
100
100 μs
1 ms
10 ms
100 ms
1 s, 10 s, DC
1
0
5