SI5433BDC-T1-GE3 Vishay, SI5433BDC-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI5433BDC-T1-GE3
• Description: MOSFET P-CH D-S 20V 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5433BDC-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 37 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5433BDC-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73208
S-83054-Rev. B, 29-Dec-08
0.12
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.8 A
0.2
On-Resistance vs. Drain Current
= 10 V
3
4
V
SD
V
Q
GS
g
- Source-to-Drain Voltage (V)
0.4
I
- Total Gate Charge (nC)
6
D
= 1.8 V
- Drain Current (A)
Gate Charge
8
T
J
= 150 °C
0.6
9
12
0.8
12
T
J
V
V
= 25 °C
GS
GS
16
= 2.5 V
1.0
15
= 4.5 V
1.2
20
18
1800
1600
1400
1200
1000
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
C
GS
rss
= 4.8 A
= 4.5 V
4
1
V
V
T
DS
0
GS
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
8
2
C
C
50
iss
Vishay Siliconix
oss
I
D
Si5433BDC
= 4.8 A
12
3
75
www.vishay.com
100
16
4
125
150
20
5
3