SIR882DP-T1-GE3 Vishay, SIR882DP-T1-GE3 Datasheet - Page 2
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SIR882DP-T1-GE3
Manufacturer Part Number
SIR882DP-T1-GE3
Description
MOSFET N-CH 100V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SIR882DP-T1-GE3.pdf
(7 pages)
Specifications of SIR882DP-T1-GE3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.7 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
2.8V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
1930pF @ 50V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
7100µohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOIC
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SIR882DP-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR882DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
SiR882DP
Vishay Siliconix
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS (T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
a
J
= 25 °C, unless otherwise noted)
a
V
Symbol
V
R
V
GS(th)
I
t
t
t
t
I
I
C
V
D(on)
DS(on)
C
V
GS(th)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
I
DSS
Q
DS
g
Q
R
I
SM
t
t
t
oss
t
t
t
t
DS
rss
SD
iss
S
rr
fs
gs
gd
a
b
r
f
r
f
g
rr
g
/T
/T
J
J
I
F
V
V
V
V
I
= 10 A, dI/dt = 100 A/µs, T
V
I
D
DS
D
DS
DS
DS
DS
10 A, V
10 A, V
= 100 V, V
= 50 V, V
= 50 V, V
V
= 50 V, V
V
= 50 V, V
V
V
V
V
V
DS
V
V
V
V
DS
DS
GS
DS
GS
GS
GS
DS
DD
DD
Test Conditions
= 0 V, V
= V
= 100 V, V
= 0 V, I
5 V, V
= 7.5 V, I
= 4.5 V, I
= 10 V, I
I
= 10 V, I
= 50 V, R
= 50 V, R
T
D
f = 1 MHz
GEN
GEN
C
I
GS
= 250 µA
GS
GS
S
GS
GS
GS
= 25 °C
= 5 A
, I
= 7.5 V, R
= 7.5 V, I
= 4.5 V, I
= 10 V, I
= 10 V, R
D
GS
= 0 V, f = 1 MHz
= 0 V, T
D
GS
= 250 µA
D
D
D
D
= 250 µA
GS
L
L
= ± 20 V
= 20 A
= 20 A
= 17 A
= 15 A
= 10 V
= 5
= 5
= 0 V
J
D
D
D
g
g
= 55 °C
J
= 20 A
= 20 A
= 20 A
= 1
= 1
= 25 °C
Min.
100
1.2
0.4
30
0.0071
0.0076
0.0092
S10-2681-Rev. B, 22-Nov-10
1930
1210
Typ.
- 5.8
38.5
18.3
0.75
5.5
7.8
1.9
50
57
65
29
12
12
36
13
15
35
64
80
24
40
9
8
Document Number: 65932
0.0087
0.0094
0.0115
± 100
Max.
27.5
120
160
2.8
3.8
1.1
10
58
44
24
24
70
18
26
30
70
16
60
80
1
mV/°C
Unit
nC
nC
nA
µA
pF
ns
ns
ns
V
V
A
S
A
V