IRFHM831TR2PBF International Rectifier, IRFHM831TR2PBF Datasheet - Page 5

• Manufacturer Part Number: IRFHM831TR2PBF
• Description: MOSFET N-CH 30V 14A PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHM831TR2PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 1050pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 12.6 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 27 W
• Gate Charge Qg: 7.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHM831TR2PBFTR

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40
35
30
25
20
15
10
5
0
Fig 14a. Unclamped Inductive Test Circuit
Fig 12. On-Resistance vs. Gate Voltage
2
Fig 15a. Switching Time Test Circuit
4
V GS , Gate-to-Source Voltage (V)
R G
20V
V DS
6
t p
8
≤ 0.1
≤ 1
I AS
10
D.U.T
0.01 Ω
L
12
14
T J = 125°C
T J = 25°C
16
I D = 12A
15V
DRIVER
18
+
-
+
-
20
V DD
A
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 14b. Unclamped Inductive Waveforms
90%
V
10%
V
I
DS
AS
GS
Fig 15b. Switching Time Waveforms
200
160
120
80
40
0
25
t
d(on)
Starting T J , Junction Temperature (°C)
t
t p
50
r
75
t
d(off)
V
(BR)DSS
TOP
BOTTOM
100
t
f
6.4A
3.1A
125
12A
I D
5
150