NDD03N50ZT4G ON Semiconductor, NDD03N50ZT4G Datasheet - Page 5

• Manufacturer Part Number: NDD03N50ZT4G
• Description: MOSFET N-CH 500V 2.6A DPAK
• Manufacturer: ON Semiconductor

Specifications of NDD03N50ZT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 1.15A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2.6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 274pF @ 25V
• Power - Max: 58W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDD03N50ZT4G; NDD03N50ZT4GOSTR

0.01
100
0.01
0.1
0.1
10
1E−06
1E−06
10
1
1
50% (DUTY CYCLE)
5.0%
2.0%
1.0%
20%
10%
50% (DUTY CYCLE)
20%
10%
5%
2%
1%
SINGLE PULSE
SINGLE PULSE
1E−05
1E−05
Figure 14. Thermal Impedance (Junction−to−Ambient) for NDD03N50Z
Figure 13. Thermal Impedance (Junction−to−Case) for NDD03N50Z
1E−04
1E−04
0.01
100
0.1
10
1
0.1
V
SINGLE PULSE
T
Figure 12. Maximum Rated Forward Biased
C
GS
= 25°C
1E−03
v 30 V
1E−03
V
Safe Operating Area NDD03N50Z
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
1
http://onsemi.com
1E−02
1E−02
PULSE TIME (s)
PULSE TIME (s)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
10 ms
5
10
1 ms
LIMIT
dc
100 ms
1E−01
1E−01
10 ms
100
1E+00
1E+00
1000
1E+01
1E+01
R
Steady State
R
Steady State
qJC
qJA
1E+02
1E+02
= 2.2°C/W
= 41°C/W
1E+03
1E+03