SI4123-EVB Silicon Laboratories Inc, SI4123-EVB Datasheet - Page 19
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SI4123-EVB
Manufacturer Part Number
SI4123-EVB
Description
BOARD EVALUATION FOR SI4123
Manufacturer
Silicon Laboratories Inc
Type
Synthesizerr
Specifications of SI4123-EVB
Contents
Board and CD-ROM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
For Use With/related Products
SI4123
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
GND
+5VCC
+3VDD
GND
4 Layer FR4
Euro_term
Note 1:
JP1
HEADER 13X2
2
4
6
8
10
12
14
16
18
20
22
24
26
JP11
Si41ap-PCB
1
2
3
Header test point spacing : 200 mil
11
13
15
17
19
21
23
25
1
3
5
7
9
+5VCC
PCB1
+5VCC
top copper: 35 microns (1 oz final copper + plating thickness)
first dielectric: FR4, 210 microns, tolerance +/- 10%
ground: 35 microns
second dielectric: FR4, 1025 microns, tolerance +/- 20%
Vdd: 35 microns
third dielectric: FR4, 210 microns, tolerance +/- 10%
bottom copper: 35 microns
-----------------------------------------------------------------------
Total thickness: 1585 microns
+
C16
10uF
1
3
2
R29 1k
R14 1k
U11
TPS76030DBV
Vin
ON/OFF
GND
C20
100pF
R28 1k
R30 1k
Vout
N/C
C21
100pF
5
4
C22
100pF
10uF
PC_AUXOUT
C23
GND
PC_GPO
PC_SENB
PC_SDATA
PC_SCLK
C10
100pF
GND
+
+
C17
10uF
GND
3V
Reg
Unreg
GND
18
16
14
12
11
13
15
17
10
Figure 19. Si4135 MLP (1 of 2)
U10
74LVTH241
1Y1
1Y2
1Y3
1Y4
2A1
2A2
2A3
2A4
GND Vcc
JP4
1OE
2OE
2Y1
2Y2
2Y3
2Y4
1A1
1A2
1A3
1A4
1
2
3
2
4
6
8
9
7
5
3
1
19
20
10uF
C12
22nF
GND
C15
+3VDD
+
GND
GND
+3VDD
+3VDD
R23
0R
R24 0R
C18
10uF
J2
+3VDD
+
ON
TCXO
J1
GPO
J3
GND
C13
22nF
OFF
GND
GND
GND
JP5
J4
SENB
47k
C14
10uF
R19
GPO
Enable
+
3
4
J5
SDATA
JP2
U12
19.68 MHz TCXO
TCXO Footprint
8.0
1.1
OUT
VDD
GND
AFC
See
Note
1
PWDNB
GND
J6
SCLK
47k
R20
2
1
GPO / External
PWDNB
JP7
R25 0R
JP8
GND
J7
AUXOUT
GND
GND
Units : mm
2.6
VC
GND
See
Note
1
1
1
6.5
R22 0R
JP9
JP10
PWDNB
Enable
R26
n/f
GND
TCXO
JP3
XIN
EXT
+3VDD
R27
50
GND
J8
JP6
C11 100pF
R21
47k
GND
External Reference
Input
PWDNB
SENB
SDATA
SCLK
AUXOUT
XIN