RF2373TR7 RFMD, RF2373TR7 Datasheet - Page 2

• Manufacturer Part Number: RF2373TR7
• Description: IC AMP WLAN/LNA DVR 3V SOT23-5
• Manufacturer: RFMD

Specifications of RF2373TR7

• Current - Supply: 8mA ~ 19mA
• Frequency: 400MHz ~ 3GHz
• Gain: 19dB
• Noise Figure: 1.1dB
• P1db: -6dBm
• Package / Case: SOT-23-5, SC-74A, SOT-25
• Rf Type: WLAN, GPS, CDMA, PCS
• Test Frequency: 1.575GHz
• Voltage - Supply: 2.7 V ~ 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 689-1011-2

RF2373
2 of 8
Absolute Maximum Ratings
Supply Voltage
Bias Voltage, V
Input RF Level at F<2.3GHz
Input RF Level at F>2.3GHz
Current Drain, I
Operating Ambient Temperature
Storage Temperature
NOTE: Exceeding any one or a combination of the above maximum rating lim-
its may cause permanent damage. Input RF transients to +15dBm will not
harm the device. For sustained operation at inputs >+5dBm, a small dropping
resistor is recommended in series with the V
to self-biasing to <32mA. Furthermore, while the LNA is in Bypass Mode, and
for sustained operation at the input, +10dBm is the maximum recommended
power level for Frequencies above 2300MHz. +5dBm is the maximum recom-
mended power level for Frequencies <2300MHz.
Overall
Supply Voltage (V
Bias Voltage (V
RF Frequency Range
Power Down Current
Isolation
Current Drain (LNA)
IP2
Cellular Low Noise Amplifier
Frequency
Gain
Noise Figure
IIP3
IP1dB
GPS Low Noise Amplifier
Frequency
Gain
Noise Figure
IIP3
IP1dB
Parameter
Parameter
BIAS
BIAS)
CC
CC)
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Min.
400
820
2.7
2.7
8
+10 (see note)
CC
+5 (see note)
-0.5 to +6.0
-40 to +150
-40 to +85
in order to limit the current due
Rating
<V
Specification
32
CC
1575
Typ.
21.5
19.0
880
3.3
3.3
1.1
-11
1.1
23
14
55
-6
-1
5
Max.
3800
Unit
dBm
dBm
V
960
V
5.0
5.0
mA
10
19
°C
°C
DC
DC
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Unit
dBm
dBm
dBm
dBm
dBm
MHz
MHz
MHz
mA
μA
dB
dB
dB
dB
dB
V
V
Caution! ESD sensitive device.
25°C, V
otherwise specified
V
Bias Resistor (R1)=560Ω
BIAS
=0V
CC
=3.3V, at typical frequencies unless
Condition
Rev A8 DS081217