SGA-2486Z Sirenza Microdevices Inc, SGA-2486Z Datasheet - Page 2
![IC AMP HBT SIGE 5000MHZ SOT-86](/photos/5/65/56504/599-sot-86_sml.jpg)
SGA-2486Z
Manufacturer Part Number
SGA-2486Z
Description
IC AMP HBT SIGE 5000MHZ SOT-86
Manufacturer
Sirenza Microdevices Inc
Datasheet
1.SGA-2486Z.pdf
(6 pages)
Specifications of SGA-2486Z
Current - Supply
17mA ~ 23mA
Frequency
0Hz ~ 5GHz
Gain
16.7dB
Noise Figure
3.2dB
P1db
7.5dBm
Package / Case
SOT-86
Rf Type
Cellular, GSM, PCS, UMTS
Test Frequency
1.95GHz
Voltage - Supply
2.4V ~ 3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
599-1019-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SGA-2486Z
Manufacturer:
RFMD
Quantity:
5 000
Company:
Part Number:
SGA-2486Z-PCK1
Manufacturer:
RFMD
Quantity:
5 000
Company:
Part Number:
SGA-2486ZSB
Manufacturer:
Z-COMM
Quantity:
5 000
Company:
Part Number:
SGA-2486ZSQ
Manufacturer:
RFMD
Quantity:
5 000
Company:
Part Number:
SGA-2486ZSR
Manufacturer:
RFMD
Quantity:
5 000
SGA-2486(Z)
Typical Performance at Key Operating Frequencies
2 of 6
Absolute Maximum Ratings
Max Device Current (I
Max Device Voltage (V
Max RF Input Power
Max Junction Temp (T
Operating Temp Range (T
Max Storage Temp
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
J
Parameter
-T
Output Power at 1dB Compression
Output Third Order Intercept Point
L
)/R
S
30
25
20
15
10
TH
=5V, I
Output Return Loss
, j-l
Small Signal Gain
Input Return Loss
D
J
Reverse Isolation
D
)
0
)
Parameter
)
Noise Figure
D
L
)
=20mA Typ., OIP
0.5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
OIP
V
D
1
= 2.7 V, I
Frequency (GHz)
3
vs. Frequency
3
Tone Spacing=1MHz, P
1.5
5
4
3
2
1
0
D
-40 to +85
= 20 mA
0
Rating
+150
+150
+18
40
5
2
Noise Figure vs. Frequency
0.5
T
L
=+25ºC
2.5
Unit
V
dBm
dBm
dB
dB
dB
dB
dB
D
= 2.7 V, I
1
OUT
Frequency (GHz)
3
per tone=-10dBm, R
Unit
dBm
mA
1.5
°C
°C
°C
V
MHz
100
D
18.6
16.7
23.2
= 20 mA
2
10
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
8
6
4
2
0
T
MHz
500
0
20.4
20.7
14.6
16.9
23.2
L
8.0
2.7
BIAS
=+25ºC
2.5
=120Ω, T
Caution! ESD sensitive device.
0.5
P
V
3
MHz
850
1dB
19.8
20.0
12.7
23.1
D
17.4
8.4
2.7
= 2.7 V, I
L
1
Frequency (GHz)
=25°C, Z
vs. Frequency
1.5
D
1950
= 20 mA
MHz
S
16.7
20.8
10.9
16.5
22.8
3.2
7.5
=Z
L
=50Ω
2
T
L
=+25ºC
2400
2.5
MHz
15.3
22.6
21.2
16.9
9.8
3.3
7.1
EDS-100629 Rev F
3
3500
MHz
15.7
21.3
8.2