SBB-2089Z Sirenza Microdevices Inc, SBB-2089Z Datasheet - Page 2

• Manufacturer Part Number: SBB-2089Z
• Description: IC AMP HBT 850MHZ SOT-89
• Manufacturer: Sirenza Microdevices Inc

Specifications of SBB-2089Z

• Current - Supply: 82mA ~ 98mA
• Frequency: 50MHz ~ 850MHz
• Gain: 18.5dB ~ 21.5dB
• Noise Figure: 2.7dB ~ 3.7dB
• P1db: 18.5dBm ~ 21dBm
• Package / Case: SOT-89
• Rf Type: Cellular, GSM, PCS, UMTS
• Test Frequency: 400MHz
• Voltage - Supply: 5V ~ 5.3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 599-1005-2

SBB2089Z
Typical RF Performance at Key Operating Frequencies (With Application Circuit)
Data on charts taken with Application Circuit
2 of 7
Absolute Maximum Ratings
Device Current (I
Device Voltage (V
RF Input Power
Junction Temp (T
Operating Temp Range (T
Storage Temp
Power Dissipation
ESD Rating - Human Body Model
Moisture Sensitivity Level
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
Output Power at 1dB Compression, P
6.0
5.0
4.0
3.0
2.0
1.0
0.0
(HBM)
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
Output Third Order Intercept Point, OIP
D
50.0
V
D
<(T
150.0
Output Return Loss, ORL
J
Parameter
Small Signal Gain, S
Input Return Loss, IRL
-T
Reverse Isolation, S
Noise Figure versus Frequency
L
250.0 350.0
)/R
Noise Figure, NF
Parameter
D
J
D
)
CC
)
)
TH
=5V
Frequency (MHz)
, j-l and T
L
450.0 550.0 650.0
)
I
D
=90mA Typ.
L
=T
12
21
LEAD
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support, contact RFMD at ([phone] or [e-mail].
1dB
750.0 850.0
3
25C
-40C
85C
OIP
3
-40 to +85
Tone Spacing=1MHz, P
Rating
Class 2
+150
+150
MSL2
Unit
0.61
dBm
dBm
110
5.5
24
dB
dB
dB
dB
dB
50.0
45.0
40.0
35.0
30.0
25.0
50.0
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
50MHz 70MHz
20.0
40.0
20.0
22.0
15.0
21.0
3.1
OIP3 versus Frequency
Frequency (MHz)
OUT
Unit
dBm
mA
°C
°C
°C
W
V
per tone=0dBm T
20.0
40.0
20.0
18.0
23.0
22.0
2.9
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
MHz
100
20.0
41.0
20.0
19.0
24.0
22.0
2.7
25C
-40C
85C
L
=25°C
Caution! ESD sensitive device.
25.0
20.0
15.0
10.0
MHz
5.0
240
20.0
42.0
20.0
20.0
22.0
27.0
2.6
50.0
Z
S
=Z
150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
L
=50Ω
P1dB versus Frequency
MHz
400
20.0
41.0
20.0
20.0
34.0
22.0
2.7
Frequency (MHz)
MHz
500
20.0
40.0
20.0
19.0
30.0
22.0
2.8
DS100810
25C
-40C
85C
MHz
850
20.0
35.0
19.0
16.0
22.0
14.0
2.9