SPA-2318Z Sirenza Microdevices Inc, SPA-2318Z Datasheet

SPA-2318Z

Manufacturer Part Number

SPA-2318Z

Description

IC AMP HBT GAAS 2200MHZ 8-SOIC

Manufacturer

Sirenza Microdevices Inc

Datasheet

1.SPA-2318Z.pdf (8 pages)

Specifications of SPA-2318Z

Current - Supply

360mA ~ 425mA

Frequency

1.7GHz ~ 2.2GHz

Gain

22.5dB ~ 25dB

Noise Figure

5.5dB

P1db

29.5dBm

Package / Case

8-SOIC (0.154", 3.90mm Width) Exposed Pad

Rf Type

W-CDMA, PCS

Test Frequency

1.7GHz ~ 2.2GHz

Voltage - Supply

4.75V ~ 5.25V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

599-1065-2

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SPA-2318Z

Manufacturer:

RFMD

Quantity:

20 000

Company:

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Part Number:

SPA-2318Z-EVB1

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPA-2318Z-EVB2

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPA-2318ZSB

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPA-2318ZSQ

Manufacturer:

RFMD

Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SPA-2318ZSR

Manufacturer:

TST

Quantity:

5 000

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Product Description

RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT)

amplifier housed in a low-cost surface-mountable plastic package. These HBT

amplifiers are fabricated using molecular beam epitaxial growth technology which

produces reliable and consistent performance from wafer to wafer and lot to lot.

This product is specifically designed for use as a driver amplifier for infrastructure

equipment in the 1960MHz and 2140MHz bands. Its high linearity makes it an

ideal choice for multi-carrier and digital applications. The matte tin finish on the

lead-free package utilizes a post annealing process to mitigate tin whisker forma-

EDS-101432 Rev J

Frequency of Operation

Output Power at 1dB Compression

Adjacent Channel Power

Small Signal Gain

Input VSWR

Output Third Order Intercept Point

Noise Figure

Device Current

Device Voltage

Thermal Resistance

Test Conditions: Z

Optimum Technology

Matching® Applied

(Junction - Lead)

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

RF MEMS

Parameter

[1,2]

=50Ω

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

tion and is RoHS compliant per EU Directive 2002/95. This

package is also manufactured with green molding compounds

that contain no antimony trioxide or halogenated fire retar-

dants.

[1]

Temp=25°C

VBIAS

VPC2

RFIN

VC1

[2]

[1]

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SPA-2318(Z)

Low Noise,

High Gain SiGe

HBT

Min.

1700

4.75

21.0

360

=5.0V

Specification

Active

Bias

[1] Optimal ACP tune

-55.0

-50.0

1.6:1

Typ.

29.5

24.0

23.5

46.5

47.0

400

5.5

5.0

Max.

2200

1700MHz to 2200MHz 1 WATT POWER AMP

RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)

-47.0

24.5

5.25

425

[2] Optimal IP

RFOUT/

VC2

°C/W

Unit

MHz

dBm

dBc

tune

1960MHz

2140MHz

1960MHz, IS-95 at P

2140MHz

1960MHz

2140MHz

1960MHz

2140MHz

1960MHz, Power out per tone=+14dBm

2140MHz

1960MHz

2140MHz

BIAS

=85°C

Features

Applications

=10mA, I

OUT

Now Available in Lead-Free,

RoHS Compliant, and Green

Packaging

High Linearity Performance:

+21dBm IS-95 Channel

Power at -55dBc ACP;

+20.7dBm WCDMA Channel

Power at -50dBc ACP;

+47dBm Typ. OIP

On-Chip Active Bias Control

High Gain: 24dB Typ. at

1960MHz

Patented High Reliability

GaAs HBT Technology

Surface-Mountable Plastic

Package

WCDMA Systems

PCS Systems

Multi-Carrier Applications

=20.7dBm

SPA-2318(Z)

=70mA, I

WITH ACTIVE BIAS

Condition

OUT

=21.0dBm, WCDMA at

Package: ESOP-8

=320mA

1 of 8

Related parts for SPA-2318Z

SPA-2318Z Summary of contents

Page 1

... High Gain SiGe HBT Product Description RFMD’s SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. ...

Page 2

... SPA-2318(Z) Absolute Maximum Ratings Parameter Max Supply Current ( typ Max Supply Current ( typ Max Device Voltage ( typ Max RF Input Power Max Junction Temp ( Max Storage Temp Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one ...

Page 3

... Ohm Tune for optimal ACP performance Vpc Vcc Tune for optimal ACP performance R2 Sirenza Microdevices ECB-101161 Rev. C SOIC-8 PA Eval Board Vpc SPA-2318( - (V) cc 20pF 2.2pF Ref. Des. Value Part Number 1.5pF, ±0.25pF (IP3) C1 Rohm MCH18 series 2.2pF, ±0.25pF (ACP) ...

Page 4

... SPA-2318(Z) ACP Optimized 2140MHz Application Circuit Data, I PCCPCH+PSCH+SSCH+CPICH+PICH+64DPCH, 10.5dB peak to average at 0.001% probability W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power -40 -45 -50 -55 -60 -65 - dBm ACP Optimized at 2140MHz Application Circuit Data, I P1dB vs Frequency 2.11 2.12 2.13 2.14 GHz Input/Output Return Loss, Isolation vs Frequency, T=25° ...

Page 5

... Tantalum Vpc Vcc Tune for optimal ACP performance Sirenza Microdevices ECB-101161 Rev. C SOIC Eval Board Vpc SPA-2318(Z) Ic2 39pF 1.8pF Ref. Des. Value Part Number 1.5pF, ±0.25pF (IP3) C1 Rohm MCH18 series 2.2pF, ±0.25pF (ACP) C2 56pF, 5% Rohm MCH18 series C3 10uF, 10% AVX TAJB106K020R C4 ...

Page 6

... SPA-2318(Z) Pin Function Description 1 VC1 VC1 is the supply voltage for the first stage transistor. The configuration as shown on the Application Schematic is required for optimum RF performance. 2 VBIAS VBias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Sche- matic ...

Page 7

... SPA-2318Z 7” 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-101432 Rev J Part Identification Marking Lot ID Lot ID SPA-2318 SPA-2318Z Recommended Land Pattern 0.150 [3.81] Plated-Thru Holes 0.140 [3.56] Machine Screws 0.080 [2.03] 0.020 [0.51] ...

Page 8

... SPA-2318(Z) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com EDS-101432 Rev J ...

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