RF3809TR7 RFMD, RF3809TR7 Datasheet - Page 7

• Manufacturer Part Number: RF3809TR7
• Description: IC AMP HBT GAAS PRE-DVR 2W 8SOIC
• Manufacturer: RFMD

Specifications of RF3809TR7

• Current - Supply: 225mA ~ 316mA
• Frequency: 450MHz ~ 2.5GHz
• Gain: 9dB ~ 11.5dB
• P1db: 32dBm ~ 32.5dBm
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Rf Type: W-CDMA, SATCOM, NMT,GSM, DCS, PCS, UMTS, WLAN
• Test Frequency: 2.11GHz ~ 2.17GHz
• Voltage - Supply: 4.5V ~ 9V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Other names: 689-1028-2

RF3809 design accommodates use in a variety of applications:
• Linear driver from 450 MHz to 2500 MHz
• 2nd/3rd stage high linearity LNA, with noise figure in the 3 dB to 4 dB range from 800 MHz to 2200 MHz
• High efficiency (> 50%) output stage for non-linear applications
Nominal data sheet shows specification for V
simple bias resistor change at V
ing, 5 V data will compare to that for 8 V as follows:
• 3 dB to 3.5 dB reduction in OP1dB
• 0.4 dB to 0.5 dB increase in small signal gain
For operation at other than 5 V, bias R can be calculated as follows (V
different voltage is determined with same methodology).
1. Use nominal 8 V case as a starting point: V
2. Using evaluation board with separate lab supplies on (V
3. V
4. At this point, pin voltage at V
5. Next, calculate new bias R for V
Junction-to-case thermal resistance (R
was generated with nominal V
with operating condition, junction temperature can be calculated. Resultant T
RF3809 evaluation boards are matched for high efficiency at O
match achieving equivalent or better efficiency on system board should be the goal.
Typical s-parameter responses for each evaluation board are shown within the data sheet. These boards were matched with
two specifications in mind:
• Output load impedance set for optimum OIP
• Output load impedance set for high efficiency at O
In some cases, low power operation being one, it may be desirable to improve output return loss seen on evaluation board.
This can be done with output match adjust. The result will be an increase in small signal gain. Tradeoffs between return loss,
gain, OIP
Finally, infrastructure qualification report for RF3809 can be obtained by contacting RFMD.
Rev A6 DS090504
achieve same I
tained at 15 mA, and I
value = 47 Ω is called out. In this way, bias R can be calculated for any V
limit for RF3809 = 30 mA.
0.023 * 300 = 3.9 V.
REF
can then be increased > 8 V until I
3
, and compression point can then be considered in obtaining optimum performance for a particular application.
CQ
with V
CQ
Theory of Operation and Application Information
CC
drops from nominal value of 258 mA.
= V
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
CC
REF
REF
BIAS
= V
REF
.. “Bias Table” on page 5 shows resistor values for V
is calculated (or measured with DVM): V
= V
BIAS
= 5 V: Bias R = (5 – 3.9)/0.023 = 47.8 Ω. See “Bias Table” on page 5, standard resistor
TH_JC
REF
= V
CQ
= 5 V.
REF
) is shown versus output power in the graph section of this data sheet. The graph
is restored. I
CC
CC
= 8 V, I
3
= V
= V
/ACP (Adjacent Channel Power for commonly used modulation standards).
BIAS
BIAS
REF
P1dB
= V
= V
REF
= 15 mA, where ambient temperature = 85 °C. Using this curve along
REF
, with ruggedness (survival) into output 4:1 VSWR.
REF
CC
increase to 23 mA is required (as seen in “Bias Table” on page 5).
= 8 V, I
= 8 V. RF3809 can easily be configured for 5 V operation, with a
/V
BIAS
P1dB
REF
) and (V
CC
. To ensure reliability for operation at high power, output
= V
= 15 mA, I
BIAS
CC
PIN
REF
= V
J
= V
= V
for this case yields MTTF ≥ 100 years. Standard
), set V
BIAS
REF
CQ
REF
= 258 mA. Target condition will be to
= 5 V is used here to illustrate, operation at
= V
at eval board input – I
CC
REF
CC
/V
= V
BIAS
configuration. The maximum I
BIAS
= 5 V, V
= V
REF
REF
= 5 V. Generally speak-
RF3809
= 8 V. I
REF
* bias R = 10.8 –
REF
is main-
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REF