UPC8151TB-E3-A CEL, UPC8151TB-E3-A Datasheet - Page 3

• Manufacturer Part Number: UPC8151TB-E3-A
• Description: IC MMIC AMPLIFIER SOT-363
• Manufacturer: CEL
• Type: RF IC'sr

Specifications of UPC8151TB-E3-A

• Current - Supply: 4.2mA
• Frequency: 100MHz ~ 1.9GHz
• Gain: 12.5dB
• Noise Figure: 6dB
• P1db: 2.5dBm
• Package / Case: SC-70-6, SC-88, SOT-363
• Rf Type: PCS, DCS
• Test Frequency: 1GHz
• Voltage - Supply: 2.4V ~ 3.3V
• Operating Frequency: 100 MHz to 900 MHz
• Operating Supply Voltage: 2.4 V to 3.3 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document No. P12549EJ3V0DS00 (3rd edition)
Date Published February 2001 N CP(K)
Printed in Japan
DESCRIPTION
amplifiers for cellular or cordless telephones. These amplifiers can realize low current consumption with external
chip inductor (eg 1005 size) which can not be realized on internal 50 Ω wideband matched IC. These low current
amplifiers operate on 3.0 V.
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Low current consumption
• High efficiency
• Power gain
• Excellent isolation
• Operating frequency
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Light weight
APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular or cordless telephones
The µ PC8128TB, µ PC8151TB and µ PC8152TB are silicon monolithic integrated circuits designed as buffer
These ICs are manufactured using NEC’s 20 GHz f
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
SILICON MMIC LOW CURRENT AMPLIFIERS
µ µ µ µ PC8128TB, µ µ µ µ PC8151TB, µ µ µ µ PC8152TB
FOR CELLULAR/CORDLESS TELEPHONES
BIPOLAR ANALOG INTEGRATED CIRCUITS
: V
: µ PC8128TB
: µ PC8128TB
: µ PC8128TB, 8151TB ; G
: µ PC8128TB
: µ PC8151TB
: µ PC8152TB
: 100 to 1 900 MHz (Output port LC matching)
: 7 mg (Standard value)
µ PC8151TB
µ PC8152TB
µ PC8151TB
µ PC8152TB
µ PC8152TB
Caution Electro-static sensitive devices
CC
The mark
= 2.4 to 3.3 V
DATA SHEET
shows major revised points.
T
; I
; I
; I
; P
; P
; P
; G
; ISL = 39 dB TYP. @f = 1 GHz
; ISL = 38 dB TYP. @f = 1 GHz
; ISL = 40 dB TYP. @f = 1 GHz
NESAT™ III silicon bipolar process. This process uses
CC
CC
CC
O(1 dB)
O(1 dB)
O(1 dB)
P
P
= 12.5 dB TYP. @f = 1 GHz
= 23 dB TYP. @f = 1 GHz
= 2.8 mA TYP. @V
= 4.2 mA TYP. @V
= 5.6 mA TYP. @V
= −4.0 dBm TYP. @f = 1 GHz
= +2.5 dBm TYP. @f = 1 GHz
= −4.5 dBm TYP. @f = 1 GHz
CC
CC
CC
= 3.0 V
= 3.0 V
= 3.0 V
©
1997, 2001