ALM-1106-BLK Avago Technologies US Inc., ALM-1106-BLK Datasheet - Page 2

IC AMP GPS LO NOISE SHDN 2X2SMD

ALM-1106-BLK

Manufacturer Part Number
ALM-1106-BLK
Description
IC AMP GPS LO NOISE SHDN 2X2SMD
Manufacturer
Avago Technologies US Inc.
Datasheets

Specifications of ALM-1106-BLK

Rf Type
GPS, ISM
Gain
14.3dB
Current - Supply
8mA
Frequency
900MHz ~ 3.5GHz
Noise Figure
0.8dB
P1db
1.8dBm
Package / Case
6-DFN
Test Frequency
1.575GHz
Voltage - Supply
2.85V
Frequency Rf
3.5GHz
Noise Figure Typ
0.8dB
Supply Current
8mA
Power Dissipation Pd
54mW
Supply Voltage Range
1V To 3.6V
Termination Type
SMD
Bandwidth
1.575GHz
No. Of Pins
6
Rohs Compliant
Yes
Filter Terminals
SMD
Frequency Range
0.9GHz To 3.5GHz
Ic Generic Number
1106
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ALM-1106-BLK
Manufacturer:
AVAGO/安华高
Quantity:
20 000
Part Number:
ALM-1106-BLKG
Manufacturer:
TI
Quantity:
1 160
Absolute Maximum Ratings
Notes:
1. Operation of this device above any
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature T
4. Channel-to-board thermal resistance measured using 150°C Liquid Crystal Measurement method.
Figure 1. Gain @ 1.575GHz; LSL = 12.7dB, Nominal = 14.3dB, USL =
15.8dB
3000
2500
2000
1500
1000
Figure 3. Ids @ 1.575GHz; Nominal = 8mA, USL = 13mA
Notes:
5. Distribution data sample size is 10K samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
6. Measurements are made on production test board, which represents a trade-off between optimal Gain, NF, IIP3, IP1dB and VSWR. Circuit losses
4000
3000
2000
1000
2
Product Consistency Distribution Charts
Symbol
IDS
Pdiss
Pin max.
θch_b
VDS
TCH
TSTG
500
one of these parameters may cause permanent damage.
0
0
nominal values anywhere between the upper and lower limits.
have been de-embedded from actual measurements.
12
3
-3 Std
5
13
7
Drain - Source Voltage[2]
Drain Current[2]
RF Input Power
Total Power Dissipation [3]
Channel Temperature
Storage Temperature
Thermal Resistance [4]
Parameter
14
[1]
9
Stdev = 1.8
B
is 25°C. Derate 4.32mW/°C for T
15
+3 Std
Stdev = 0.4
11
[5,6]
16
+3 Std
13
15
17
B
> 137 °C.
4000
3000
2000
1000
Figure 2. NF @ 1.575GHz; Nominal = 0.8dB, USL = 1.3dB
0
0
Stdev = 0.1
0.3
Units
V
mA
mW
dBm
°C
°C
°C/W
0.6
15
150
3.6
54
+10
-65 to 150
232
Absolute Maximum
0.9
+3 Std
1.2
1.5

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