MGA-425P8-TR1 Avago Technologies US Inc., MGA-425P8-TR1 Datasheet - Page 2

• Manufacturer Part Number: MGA-425P8-TR1
• Description: IC PWR AMP PHEMT GAAS ENH 8-PLCC
• Manufacturer: Avago Technologies US Inc.

Specifications of MGA-425P8-TR1

• Gain: 14.5dB ~ 17.5dB
• Current - Supply: 51mA ~ 65mA
• Frequency: 2GHz ~ 10GHz
• Noise Figure: 1.7dB
• P1db: 18.25dBm ~ 20.3dBm
• Package / Case: 8-LPCC
• Rf Type: ISM, 802.11a/Wi-Fi
• Test Frequency: 5.25GHz
• Voltage - Supply: 3.3V
• Frequency Range: 2GHz To 10GHz
• Noise Figure Typ: 1.7dB
• Power Dissipation Pd: 500mW
• Supply Current: 58mA
• Supply Voltage Range: 3.3V
• Rf Ic Case Style: LPCC
• No. Of Pins: 8
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 10GHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: LPCC
• Mounting: Surface Mount
• Pin Count: 8
• Noise Figure (typ): 1.7@5250MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MGA-425P8 Absolute Maximum Ratings
V
I
P
P
T
T
θ
Product Consistency Distribution Charts at 5.25 GHz, 3.3V RBias = 680Ω
150
120
240
200
160
120
2
Symbol
DS
Figure 1. OIP3;
LSL = 29 dBm, Nominal = 32.9 dBm.
Figure 4. P1dB;
LSL = 18.25 dBm, Nominal = 20.3 dBm.
90
60
30
80
40
diss
in
CH
STG
ch_b
DS
0
0
18.3
max.
29
19.3
31
OIP3 (dBm)
P1dB (dBm)
Parameter
Drain – Supply Voltage
Drain Current
Total Power Dissipation
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance
20.3
33
21.3
35
[2]
[4]
22.3
37
[2]
[1]
[3]
180
150
120
180
150
120
Figure 2. GAIN;
LSL = 14.5 dB, Nominal = 16 dB, USL= 17.5 dB.
Figure 5. PAE;
LSL = 33.5 %, Nominal = 47 %.
90
60
30
90
60
30
0
0
14.8
34
Units
V
A
W
dBm
°C
°C
°C/W
15.3
39
15.8
44
GAIN (dB)
PAE (%)
16.3
[5, 6]
49
Absolute
Maximum
5
100
0.5
13
150
-65 to 150
34.2
16.8
54
17.3
59
Notes:
1. Operation of this device above any
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature T
4. Channel-to-board thermal resistance mea-
Notes:
5. Distribution data sample size is 500
6. Measurements are made on production
250
200
150
100
manent damage.
25°C. Derate 29 mW/°C for T
sured using 150°C Liquid Crystal Measure-
ment method.
Figure 3. IDS;
LSL = 51 mA, Nominal = 58 mA, USL = 65 mA.
samples taken from 3 different wafers and
3 different lots. Future wafers allocated
to this product may have nominal values
anywhere between the upper and lower
limits.
test board, which represents a trade-off
between optimal OIP3, P1dB, Gain and
VSWR. Circuit losses have been de-embed-
ded from actual measurements.
one of these parameters may cause per-
50
0
51
53
55
IDS (mA)
57
59
B
61
> 133 °C.
63
B
is
65