UPC2713T-E3 CEL, UPC2713T-E3 Datasheet
UPC2713T-E3
Specifications of UPC2713T-E3
UPC2713T
UPC2713T
UPC2713TTR
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Related parts for UPC2713T-E3
UPC2713T-E3 Summary of contents
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... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2713T is a Silicon Monolithic integrated circuit manu- factured using the NESAT III process. This device is suitable for applications which require high gain and wide-band opera- tion designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/measurement equipment ...
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ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC P Input Power IN P Power Dissipation T T Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one of these parameters may result in permanent ...
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... Input Power, P (dBm) IN NOISE FIGURE vs. FREQUENCY 0.5 1.0 Frequency, f (GHz 5.0V CC 1 1.5 UPC2713T POWER vs. FREQUENCY 10 P SAT 1dB -10 -15 0 0.5 1.0 1.5 Frequency, f (GHz) X: Typical SSB Third Order Intercept Point OUTPUT POWER vs. INPUT POWER AND TEMPERATURE 85˚ 5 ...
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... TYPICAL SCATTERING PARAMETERS UPC2713T FREQUENCY S 11 (GHz) MAG ANG 0.10 0.350 -21.8 0.20 0.290 -33.1 0.30 0.243 -41.7 0.40 0.207 -47.3 0.50 0.185 -50.5 0.60 0.176 -54.0 0.70 0.161 -57.5 0.80 0.148 -60.2 0.90 0.127 -63.9 1.00 0.111 -62.9 1.10 0.097 -56 ...
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... ORDERING INFORMATION V CC Embossed Tape wide. OUT LEAD CONNECTIONS 3 GND INPUT 2. GND 3. GND 4 5 -0.05 6 0.3 +0.10 RECOMMENDED P.C.B. LAYOUT 0.13 0.1 RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS PART NUMBER QTY UPC2713T-E3 3K/Reel (Top View) (Bottom View OUTPUT 5. GND 3. 1.0 1.0 MIN MIN 3 2 ...