NBB-502TR13 RFMD, NBB-502TR13 Datasheet - Page 4

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NBB-502TR13

Manufacturer Part Number
NBB-502TR13
Description
IC AMP MMIC GAAS 4GHZ 9-MPGA
Manufacturer
RFMD
Datasheet

Specifications of NBB-502TR13

Current - Supply
25mA ~ 45mA
Frequency
0Hz ~ 4GHz
Gain
19dB
Noise Figure
4dB @ 3GHz
P1db
13dBm
Package / Case
9-MPGA
Rf Type
LMDS, VSAT, WLAN, UNII, DWDM, PTP PMP
Test Frequency
2GHz
Voltage - Supply
3.6V ~ 4.2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the
ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.
Wire Bonding
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable
practices for wire bonding.
Assembly Procedure
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive
silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside
gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is
Ablebond 84-1LMI from Ablestik.
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
4-60
Recommended Bias Resistor Values
Supply Voltage, V
Bias Resistor, R
NBB-502
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
CC
CC
(Ω)
(V)
31
5
In
Typical Bias Configuration
117
C block
8
Application Notes
4
174
10
5,6,7,9
1,2,3
8
231
12
V
DEVICE
V
V
L choke
(optional)
CC
R
D
C block
CC
= 3.9 V
317
15
Out
460
20
Rev A5 060124

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