ALM-1322-TR1G Avago Technologies US Inc., ALM-1322-TR1G Datasheet - Page 2

• Manufacturer Part Number: ALM-1322-TR1G
• Description: IC AMP VERY LO NOISE 5X6MM 22LD
• Manufacturer: Avago Technologies US Inc.
• Type: General Purposer

Specifications of ALM-1322-TR1G

• Rf Type: Cellular, CDMA, W-CDMA, PCS, EGSM
• Gain: 29.9dB
• Current - Supply: 100.2mA
• Frequency: 1.8GHz ~ 2.2GHz
• Noise Figure: 0.57dB
• P1db: 35.6dBm
• Package / Case: 22-MCOB
• Test Frequency: 2GHz
• Voltage - Supply: 5V
• Frequency Rf: 2.2GHz
• Noise Figure Typ: 0.57dB
• Supply Current: 100.2mA
• Power Dissipation Pd: 1.21W
• Frequency Max: 2.2GHz
• Termination Type: SMD
• Frequency Min: 1.8GHz
• Frequency (max): 2.2GHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 5V
• Package Type: MCOB
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 22
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Absolute Maximum Rating
product Consistency Distribution Charts
Figure 1. NF@ 2.0GHz; 5V, Vctrl=2.2V
Figure 3. oIp3@ 2.0GHz; 5V, Vctrl=2.2V
Note:
5. Distribution data sample size is 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
6. Measurements are made on a production test board, which can show a variance of up to 1dB in gain and OIP3 compared to a soldered-down demo
2
Symbol
Vdd
Vctrl
Pin,max
Pdiss
T
T
j
STG
150
120
180
150
120
90
60
30
nominal values anywhere between the upper and lower limits.
board. Input trace losses have been de-embedded from actual measurements.
90
60
30
0
0
Process Capability for NF
0.45
29
Process Capability for OIP3
parameter
Device Supply Voltage
Control Voltage
CW RF Input Power
(Vdd = 5.0, Vctrl=2.2V)
Total Power Dissipation
Junction Temperature
Storage Temperature
Nominal = 0.57, USL = 1.0
0.5
31
LSL = 29.0, Nominal = 35.6
0.55
33
[2]
OIP3 (dBm)
T
NF (dB)
A
=25°C
0.6
35
[4]
0.65
37
Std dev = 0.03
CPK = 4.35
Std dev = 0.96
CPK = 2.30
[5,6]
Units
V
V
dBm
W
°C
°C
0.7
39
0.75
41
Absolute Max.
5.5
3.0
22
1.21
150
-65 to 150
Figure 2. Gain @ 2.0GHz; 5V, Vctrl=2.2V
Figure 4. Vctrl @ 2.0GHz; 5V, Vctrl=2.2V
400
300
200
100
500
400
300
200
100
0
0
Process Capability for Idd
Process Capability for Gain
75
28
LSL = 85.0, Nominal = 100.2, USL = 115.0
LSL = 28.5, Nominal = 29.9
Notes:
2. Operation of this device in excess of any of these
3. Thermal resistance measured using Infra-Red
4. Board (module belly) temperature TB is 25°C.
85
Thermal Resistance
(Vdd = 5.0V, Vctrl=2.2V)
qjc = 27 °C/w
limits may cause permanent damage.
Measurement Technique.
Derate 37mW/°C for TB>123°C.
29
95
Idd (mA)
Gain (dB)
30
[3]
105
Std dev = 2.3
CPK_L = 2.2
CPK_U = 2.1
Std dev = 0.2
CPK = 2.5
31
115
125
32