MHVIC915NR2 Freescale Semiconductor, MHVIC915NR2 Datasheet - Page 2

• Manufacturer Part Number: MHVIC915NR2
• Description: IC RF POWER AMP 960MHZ 16-PFP
• Manufacturer: Freescale Semiconductor

Specifications of MHVIC915NR2

• Current - Supply: 80mA
• Frequency: 750MHz ~ 960MHz
• Gain: 30dB
• P1db: 15W
• Package / Case: 16-PFP
• Rf Type: Cellular, W-CDMA, IS-95, N-CDMA
• Voltage - Supply: 26V
• Power Dissipation Pd: 15W
• Supply Current: 120mA
• Supply Voltage Range: 26V To 28V
• No. Of Pins: 16
• Msl: MSL 3 - 168 Hours
• Peak Reflow Compatible (260 C): Yes
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Test Frequency: -

2
MHVIC915NR2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ ±750 MHz. PAR = 9.8 dB @ 0.01% Probability
on CCDF
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain (P
Power Added Efficiency (P
Input Return Loss (P
Adjacent Channel Power Ratio (P
Adjacent Channel Power Ratio (P
Gain Flatness @ P
Bias Sense FET Drain Current
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Driver Application
(P
Output Application
(P
GSM Application
(P
V
V
BSD
BIAS BSG
Select Documentation/Application Notes - AN1955.
out
out
out
= 0.2 W CW)
= 2.5 W CW)
= 15 W CW)
= 27 V
= V
out
BIAS2 Q2
= 23 dBm)
out
out
= 23 dBm (865 MHz to 895 MHz)
= 23 dBm)
@ I
Test Methodology
out
DQ2
= 34 dBm)
Test Methodology
Characteristic
= 120 mA
out
out
Characteristic
= 23 dBm)
= 34 dBm)
Rating
(T
C
Stage 1, 27 Vdc, I
Stage 2, 27 Vdc, I
Stage 2, 27 Vdc, I
Stage 1, 26 Vdc, I
Stage 2, 26 Vdc, I
Stage 1, 27 Vdc, I
= 25°C unless otherwise noted)
DQ
DQ
DQ
DQ
DQ
DQ
DD
= 80 mA
= 120 mA
= 80 mA
= 120 mA
= 50 mA
= 140 mA
= 27 Vdc, I
DQ1
Rating
3
= 80 mA, I
Symbol
ACPR
ACPR
PAE
I
G
IRL
BSD
G
ps
F
DQ2
Symbol
Symbol
Package Peak Temperature
V
R
V
T
DSS
T
= 120 mA, f = 880 MHz, Single - Carrier
θJC
GS
stg
J
Min
0.8
29
—
—
—
—
—
260
A (Minimum)
0 (Minimum)
II (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Typ
- 12
- 60
- 50
0.2
1.2
31
21
Value
Class
15.1
15.8
13.8
150
Freescale Semiconductor
5.1
5.0
4.5
(1)
Max
- 55
0.4
1.6
—
—
—
- 9
RF Device Data
°C/W
(continued)
Unit
Unit
Vdc
Vdc
°C
°C
Unit
Unit
dBc
dBc
mA
°C
dB
dB
dB
%