MHV5IC1810NR2 Freescale Semiconductor, MHV5IC1810NR2 Datasheet - Page 2

• Manufacturer Part Number: MHV5IC1810NR2
• Description: IC RF POWER AMP 5W 28V 16-PFP
• Manufacturer: Freescale Semiconductor

Specifications of MHV5IC1810NR2

• Current - Supply: 90mA
• Frequency: 1.8GHz ~ 1.99GHz
• Gain: 29dB
• P1db: 10W
• Package / Case: 16-PFP
• Rf Type: Cellular, GSM, DCS, EDGE
• Voltage - Supply: 28V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 1.99GHz
• Operating Supply Voltage (min): 24V
• Operating Supply Voltage (typ): 28V
• Operating Supply Voltage (max): 32V
• Package Type: PFP
• Mounting: Surface Mount
• Pin Count: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Test Frequency: -
• Lead Free Status / Rohs Status: Compliant

2
MHV5IC1810NR2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests (In Freescale Wideband 1930--1990 MHz Test Fixture, 50 ohm system) V
P
Typical Two- -Tone Performances (In Freescale Test Fixture, 50 οhm system) V
5 W Avg., 1805--1880 MHz
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V
P
out
out
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
Power Gain
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
Power Gain
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Final Application
(P
Driver Application
(P
= 5 W Avg., f1 = 1990 MHz, f2 = 1990.1 MHz, Two--Tone Test
= 3.2 W Avg., 1805--1880 MHz or 1930--1990 MHz EDGE Modulation
Select Documentation/Application Notes -- AN1955.
out
out
= 10 W CW)
= 2.25 W CW)
Test Methodology
Characteristic
Test Methodology
Characteristic
Rating
(T
A
Stage 2, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 1, 28 Vdc, I
= 25°C unless otherwise noted)
DQ1
DQ2
DQ1
DQ2
= 120 mA
= 90 mA
= 120 mA
= 90 mA
Symbol
Rating
EVM
PAE
DD
PAE
SR1
SR2
IMD
IMD
G
G
G
IRL
IRL
3
ps
ps
ps
= 28 Vdc, I
Symbol
Symbol
V
R
V
T
P
DSS
T
DD
θJC
stg
GS
in
J
26.5
Min
Package Peak Temperature
= 28 Vdc, I
DQ1
25
DD
—
—
—
—
—
—
—
—
—
—
= 28 Vdc, I
= 120 mA, I
DQ1
III (Minimum)
A (Minimum)
0 (Minimum)
260
Typ
--34
--34
--15
--67
--76
1.1
29
29
29
29
29
--65 to +150
DQ1
Class
= 120 mA, I
--0.5, +65
--0.5, +12
Value
DQ2
Value
150
9.2
3.3
3.5
= 105 mA, I
12
10
Freescale Semiconductor
= 90 mA, P
(1)
Max
--27
- -10
—
—
—
—
—
—
—
—
—
—
DQ2
RF Device Data
DQ2
= 90 mA,
out
= 95 mA,
=
(continued)
°C/W
% rms
dBm
Unit
Unit
Vdc
Vdc
Unit
Unit
dBc
dBc
dBc
dBc
°C
°C
dB
dB
dB
dB
dB
°C
%
%