MW7IC930GNR1 Freescale Semiconductor, MW7IC930GNR1 Datasheet - Page 4

• Manufacturer Part Number: MW7IC930GNR1
• Description: IC PWR AMP RF 900MHZ TO-270-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC930GNR1

• Current - Supply: 340mA
• Frequency: 728MHz ~ 768MHz, 920MHz ~ 960MHz
• Gain: 36.8dB
• P1db: 31W
• Package / Case: TO-270-16
• Rf Type: W-CDMA
• Test Frequency: 940MHz
• Voltage - Supply: 32V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

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MW7IC930NR1 MW7IC930GNR1 MW7IC930NBR1
Table 5. Electrical Characteristics
Typical Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) V
285 mA, 920--960 MHz Bandwidth
Typical W- -CDMA Broadband Performance — 700 MHz (In Freescale 700 MHz Application Test Fixture, 50 ohm system) V
I
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
DQ1
V
IMD Symmetry @ 25 W PEP, P
VBW Resonance Point
Quiescent Current Accuracy over Temperature
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
DD
P
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
with 3 kΩ Gate Feed Resistors (--30 to 85°C)
(--30°C to +85°C)
(--30°C to +85°C)
= 106 mA, I
out
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
= 28 Vdc, I
@ 1 dB Compression Point, CW
DQ2
DQ1

= 285 mA, P
= 40 mA, I
30 dBc
Frequency
Characteristic
728 MHz
748 MHz
768 MHz
DQ2
out
out
= 340 mA
where IMD Third Order
= 3.2 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
(T
out
A
= 25°C unless otherwise noted)
= 3.2 W Avg.
(1)
G
ps
(continued)
36.4
36.4
36.4
Symbol
IMD
VBW
∆P1dB
P1dB
(dB)
∆I
∆G
G
QT
sym
F
res
PAE (%)
Min
—
—
—
—
—
—
—
16.1
16.1
16.0
DD
= 28 Vdc, I
0.036
0.02
0.01
Typ
0.2
31
45
80
ACPR (dBc)
--47.7
--47.8
--47.9
Freescale Semiconductor
DQ1
= 106 mA, I
Max
—
—
—
—
—
—
—
RF Device Data
DD
IRL (dB)
= 28 Vdc,
--17.9
--20.7
--21.8
dBm/°C
DQ2
dB/°C
MHz
MHz
Unit
dB
W
%
=