MW4IC2020GNBR1 Freescale Semiconductor, MW4IC2020GNBR1 Datasheet - Page 3

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MW4IC2020GNBR1

Manufacturer Part Number
MW4IC2020GNBR1
Description
IC PWR AMP RF 26V 20W TO272-16GW
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW4IC2020GNBR1

Current - Supply
80mA
Frequency
1.6GHz ~ 2.4GHz
Gain
29dB
Package / Case
TO-272-16 Gull Wing
Rf Type
Cellular, GSM, EDGE, CDMA
Voltage - Supply
26V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
P1db
-
Test Frequency
-
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical CDMA Performances (In Modified CDMA Test Fixture, 50 ohm system) V
P
Peak/Avg. Ratio 9.8 dB @ 0.01% Probability on CCDF.
Typical GSM EDGE Performances (In Modified GSM EDGE Test Fixture, 50 ohm system) V
I
DQ2
out
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio (±885 kHz in 30 kHz Bandwidth)
Alternate 1 Channel Power Ratio (±1.25 MHz in 12.5 kHz Bandwidth)
Alternate 2 Channel Power Ratio (±2.25 MHz in 1 MHz Bandwidth)
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
= 1 W Avg., I1930 MHz<Frequency<1990 MHz, 1 - Tone, 9 Channel Forward Model (Pilot, Paging, Sync, Traffic Codes 8 through 13).
= 230 mA, I
DQ3
= 230 mA, P
Characteristic
out
= 5 W Avg., 1805 MHz<Frequency<1990 MHz
(T
C
= 25°C unless otherwise noted)
(continued)
Symbol
ACPR
ALT1
ALT2
EVM
SR1
SR2
G
G
η
η
DD
ps
ps
D
D
= 26 Vdc,
DD
Min
DQ1
= 26 Vdc, I
MW4IC2020NBR1 MW4IC2020GNBR1
= 80 mA, I
Typ
DQ1
- 61
- 69
- 59
- 66
- 77
30
29
15
5
1
DQ2
= 80 mA,
= 240 mA, I
Max
DQ3
= 250 mA,
% rms
Unit
dBc
dBc
dBc
dBc
dBc
dB
dB
%
%
3