MW7IC2425NBR1 Freescale Semiconductor, MW7IC2425NBR1 Datasheet - Page 2

• Manufacturer Part Number: MW7IC2425NBR1
• Description: IC PWR AMP RF 2400MHZ TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC2425NBR1

• Current - Supply: 195mA
• Frequency: 2.45GHz
• Gain: 27.7dB
• Package / Case: TO-272-16
• Rf Type: ISM
• Test Frequency: 2.45GHz
• Voltage - Supply: 28V
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 28.5dB
• Frequency (max): 2.45GHz
• Package Type: TO-272 WB EP
• Pin Count: 16
• Output Capacitance (typ)@vds: 111@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 43.8%
• Mounting: Surface Mount
• Mode Of Operation: OFDM/WIMAX
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• P1db: -
• Lead Free Status / Rohs Status: Compliant

MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
2
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 - Off Characteristics
Stage 1 - On Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. Measured in Freescale Narrowband Test Fixture.
5. See Appendix A for functional test measurements and test fixture.
(Case Temperature 80°C, P
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
DD
= 65 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 1.5 Vdc, V
= 28 Vdc, I
D
DQ1
DQ1
GS
GS
DS
= 20 μAdc)
= 0 Vdc)
= 0 Vdc)
= 55 mA)
= 55 mAdc)
= 0 Vdc)
Test Methodology
Characteristic
out
Test Methodology
(1,2)
(4)
= 25 W CW)
Characteristic
(4,5)
(In Freescale Narrowband Test Fixture)
Rating
(T
C
= 25°C unless otherwise noted)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
DQ1
DQ2
= 55 mA
= 195 mA
Symbol
Rating
V
V
V
I
I
I
GS(th)
GS(Q)
GG(Q)
DSS
DSS
GSS
3
Symbol
Symbol
R
V
V
V
10.3
T
Min
P
Package Peak Temperature
T
1.2
T
—
—
—
—
θJC
stg
DS
GS
DD
C
in
J
11.2
260
Typ
1.9
2.7
—
—
—
1B (Minimum)
A (Minimum)
II (Minimum)
- 65 to +150
Value
- 0.5, +65
- 0.5, +10
32, +0
Value
Class
Freescale Semiconductor
150
225
6.1
1.2
20
(2,3)
Max
12.6
2.7
10
—
1
1
RF Device Data
(continued)
°C/W
dBm
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C