MW7IC2040NR1 Freescale Semiconductor, MW7IC2040NR1 Datasheet - Page 4
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MW7IC2040NR1
Manufacturer Part Number
MW7IC2040NR1
Description
IC PWR AMP RF 1990MHZ TO-270-16
Manufacturer
Freescale Semiconductor
Type
Power Amplifierr
Datasheet
1.MW7IC2040GNR1.pdf
(29 pages)
Specifications of MW7IC2040NR1
Current - Supply
75mA
Frequency
100MHz ~ 1GHz
Gain
23.5dB
P1db
11W
Package / Case
TO-270-16
Rf Type
General Purpose
Test Frequency
100MHz
Voltage - Supply
32V
Number Of Channels
1
Frequency (max)
1.99GHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
28V
Single Supply Voltage (max)
32V
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Pin Count
16
Mounting
Surface Mount
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MW7IC2040NR1
Manufacturer:
TE
Quantity:
30 000
Part Number:
MW7IC2040NR1
Manufacturer:
FREESCALE
Quantity:
20 000
MW7IC2040NR1 MW7IC2040GNR1 MW7IC2040NBR1
4
Table 5. Electrical Characteristics
Typical W - CDMA Performance — 1800 MHz (In Freescale W - CDMA 1805 - 1880 MHz Test Fixture, 50 ohm system) V
I
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Typical GSM EDGE Performance — 1800 MHz (In Freescale GSM EDGE 1805 - 1880 MHz Test Fixture, 50 ohm system) V
P
Typical GSM EDGE Performance — 1900 MHz (In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) V
P
Typical CW Performance (In Freescale GSM EDGE 1930 - 1990 MHz Test Fixture, 50 ohm system) V
I
DQ1
DQ2
out
out
Power Gain
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
Power Gain
Power Added Efficiency
Input Return Loss
P
out
= 16 W Avg., I
= 16 W Avg., I
= 130 mA, I
= 430 mA, P
@ 1 dB Compression Point
DQ2
out
DQ1
DQ1
= 40 W CW, 1805 - 1880 MHz and 1930 - 1990 MHz
= 330 mA, P
= 90 mA, I
= 90 mA, I
Characteristic
out
DQ2
DQ2
= 4 W Avg., 1805 - 1880 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 45.2% Clipping,
= 430 mA, 1805 - 1880 MHz EDGE Modulation
= 430 mA, 1930 - 1990 MHz EDGE Modulation
(T
C
= 25°C unless otherwise noted) (continued)
Symbol
ACPR
P1dB
EVM
EVM
PAE
PAE
SR1
SR2
PAE
SR1
SR2
PAE
G
G
G
G
IRL
IRL
ps
ps
ps
ps
Min
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
DD
= 28 Vdc, I
33.5
16.5
Typ
- 50
- 62
- 77
- 62
- 80
- 15
1.5
1.5
33
35
30
33
31
50
45
- 6
Freescale Semiconductor
DQ1
Max
DD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 90 mA,
RF Device Data
= 28 Vdc,
DD
DD
= 28 Vdc,
= 28 Vdc,
% rms
% rms
Unit
dBc
dBc
dBc
dBc
dBc
dB
dB
dB
dB
dB
dB
%
%
%
%
W