MW7IC2725NBR1 Freescale Semiconductor, MW7IC2725NBR1 Datasheet - Page 2

• Manufacturer Part Number: MW7IC2725NBR1
• Description: IC PWR AMP RF 2700MHZ TO-272-16
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC2725NBR1

• Current - Supply: 275mA
• Frequency: 2.7GHz
• Gain: 28.5dB
• P1db: 25W
• Package / Case: TO-272-16
• Rf Type: WiMax
• Test Frequency: 2.7GHz
• Voltage - Supply: 32V
• Drain Source Voltage (max): 65V
• Output Power (max): 4W
• Power Gain (typ)@vds: 28.5dB
• Frequency (min): 2.3GHz
• Frequency (max): 2.7GHz
• Package Type: TO-272 WB EP
• Pin Count: 16
• Output Capacitance (typ)@vds: 111@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 17%
• Mounting: Surface Mount
• Mode Of Operation: OFDM/WIMAX
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

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MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Stage 1 - Off Characteristics
Stage 1 - On Characteristics
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
Thermal Resistance, Junction to Case
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
Per JESD22-A113, IPC/JEDEC J-STD-020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
WiMAX Application
(Case Temperature 75°C, P
CW Application
(Case Temperature 81°C, P
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
DD
= 65 Vdc, V
= 28 Vdc, V
= 1.5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
D
DQ1
DQ1
GS
GS
DS
= 20 μAdc)
= 0 Vdc)
= 0 Vdc)
= 77 mA)
= 77 mAdc, Measured in Functional Test)
= 0 Vdc)
Test Methodology
Characteristic
out
out
(1,2)
Test Methodology
= 4 W Avg.)
= 25 W CW)
Characteristic
Rating
(T
A
= 25°C unless otherwise noted)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
DQ1
DQ2
DQ1
DQ2
= 77 mA
= 275 mA
= 77 mA
= 275 mA
Symbol
Rating
V
V
V
I
I
I
GG(Q)
GS(th)
GS(Q)
GSS
DSS
DSS
3
Symbol
Symbol
R
V
V
V
12.5
T
Min
P
T
Package Peak Temperature
1.2
T
—
—
—
—
θJC
stg
DS
GS
DD
C
in
J
15.8
260
Typ
1.9
2.7
—
—
—
1B (Minimum)
-65 to +150
A (Minimum)
II (Minimum)
Value
-0.5, +65
-0.5, +10
32, +0
Value
Class
Freescale Semiconductor
150
225
5.9
1.4
5.5
1.3
22
(2,3)
Max
19.5
2.7
10
—
1
1
RF Device Data
(continued)
°C/W
dBm
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
°C