SBA-5086 Sirenza Microdevices Inc, SBA-5086 Datasheet

SBA-5086

Manufacturer Part Number

SBA-5086

Description

IC AMP HBT 5000MHZ SOT-86

Manufacturer

Sirenza Microdevices Inc

Datasheet

1.SBA-5086Z.pdf (6 pages)

Specifications of SBA-5086

Current - Supply

72mA ~ 88mA

Frequency

0Hz ~ 5GHz

Gain

15.7dB ~ 18.7dB

Noise Figure

4.5dB ~ 5.5dB

P1db

18dBm ~ 19.5dBm

Package / Case

SOT-86

Rf Type

Cellular, PCS, GSM, UMTS

Test Frequency

1.95GHz

Voltage - Supply

4.7 V ~ 5.3 V

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

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Part Number:

SBA-5086Z-PCK1

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SBA-5086ZSB

Manufacturer:

RFMD

Quantity:

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SBA-5086ZSQ

Manufacturer:

RFMD

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Company:

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Part Number:

SBA-5086ZSR

Manufacturer:

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5 000

Current page: 1 of 6
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Product Description

RFMD’s SBA-5086 is a high performance InGaP/GaAs Heterojunction Bipolar Tran-

sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech-

nology provides broadband performance up to 5GHz with excellent thermal

performance. The heterojunction increases breakdown voltage and minimizes leak-

age current between junctions. Cancellation of emitter junction non-linearities

results in higher suppression of intermodulation products. Only a single positive

supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke

are required for operation.

EDS-102742 Rev E

Small Signal Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Output Power

Bandwidth

Input Return Loss

Output Return Loss

Noise Figure

Device Operating Voltage

Device Operating Current

Thermal Resistance (junction to lead)

Test Conditions: V

Optimum Technology

Matching® Applied

LDMOS

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

Parameter

=8V, I

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

=80mA Typ., OIP

-10

-15

-20

-25

-30

-5

0.5

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SBA-5086(Z)

Min.

15.7

32.0

17.5

11.0

14.0

4.7

Tone Spacing=1MHz, P

1.5

S11

Specification

Gain & Return Loss

Frequency (GHz)

2.5

5000

Typ.

19.0

19.5

36.9

34.0

13.3

13.0

19.0

17.2

102

4.5

4.9

S22

OUT

3.5

S21

per tone=0dBm, R

Max.

20.5

18.7

5.5

5.3

DCto5GHz, CASCADABLE InGaP/GaAs HBT

RoHS Compliant and Pb-Free Product (Z Part Number)

4.5

°C/W

Unit

dBm

MHz

5.5

BIAS

=39Ω, T

850MHz

1950MHz

850MHz

1950MHz

850MHz

1950MHz

1950MHz, -45dBc ACP IS-95 9 Forward Channels

Return Loss >10dB

1950MHz

=25°C, Z

Features

Applications

IP3=34.0dBm at 1950MHz

ACP IS-95 1950MHz

Robust 1000V ESD, Class 1C

Operates From Single Supply

Patented Thermal Design

PA Driver Amplifier

Cellular, PCS, GSM, UMTS

IF Amplifier

Wireless Data, Satellite

Terminals

OUT

SBA-5086(Z)

=13.3dBm at -45dBc

=50Ω

Condition

MMIC AMPLIFIER

Package: SOT-86

1 of 6

Related parts for SBA-5086

SBA-5086 Summary of contents

Page 1

... SBA-5086(Z) Product Description RFMD’s SBA-5086 is a high performance InGaP/GaAs Heterojunction Bipolar Tran- sistor MMIC Amplifier. A Darlington configuration designed with InGaP process tech- nology provides broadband performance up to 5GHz with excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leak- age current between junctions ...

Page 2

... SBA-5086(Z) Absolute Maximum Ratings Parameter Device Current ( Device Voltage ( Input Power Junction Temp ( Operating Temp Range ( Storage Temp Operating Dissipated Power Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one ...

Page 3

... Adj. Chan. Pwr Vs Channel Output Power -30 -35 -40 -45 -50 -55 +25c ACP -60 -40c ACP +85c ACP -65 - SBA-5086( vs. Frequency 21 +25c -40c +85c Frequency (GHz vs. Frequency Frequency (GHz Channel Pwr (dBm) 6 +25c -40c +85c 6 +25c -40c +85c 15 16 ...

Page 4

... SBA-5086( Mounting Instructions: 1. Use a large ground pad area under device pins 2 and 4 with many plated through-holes as shown recommend ounce copper. Measurements for this data sheet were made on a 31mil thick FR-4 board with 1 ounce copper on both sides. Application Circuit Element Values ...

Page 5

... RF output and bias pin. DC voltage is present on this pin, therefore a DC-blocking capacitor is necessary for proper operation. 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. EDS-102742 Rev E PCB Pad Layout PCB Pad Layout Dimensions in inches [millimeters] SBA-5086( ...

Page 6

... Refer to drawing posted at www.rfmd.com for tolerances. The part will be marked with a “BA5” or “B5Z” designator on the top surface of the package. Part Number SBA-5086 SBA-5086Z 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com Package Drawing ...

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