SGA-1163Z Sirenza Microdevices Inc, SGA-1163Z Datasheet - Page 2

• Manufacturer Part Number: SGA-1163Z
• Description: IC AMP HBT SIGE 6000MHZ SOT-363
• Manufacturer: Sirenza Microdevices Inc

Specifications of SGA-1163Z

• Current - Supply: 10mA ~ 14mA
• Frequency: 0Hz ~ 6GHz
• Gain: 11.2dB
• Noise Figure: 3.4dB @ 1GHz ~ 2.4GHz
• P1db: -4.6dBm
• Package / Case: SC-70-6, SC-88, SOT-363
• Rf Type: ISM, PCS
• Test Frequency: 1.95GHz
• Voltage - Supply: 4.2V ~ 5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SGA-1163(Z)
Typical Performance at Key Operating Frequencies
2 of 8
Absolute Maximum Ratings
Device Current (I
Device Voltage (V
RF Input Power
Junction Temp (T
Operating Temp Range (T
Storage Temp
ESD Rating - Human Body Model
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
(HBM)
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
Output Power at 1dB Compression, P
Output Third Order Intercept Point, OIP
J
Parameter
-T
T
L
L
)/R
=25°C
D
J
D
)
Output Return Loss, ORL
S
)
)
Input Return Loss, IRL
TH
Reverse Isolation, S
=8V
Small Signal Gain, G
, j-l
Noise Figure, NF
Parameter
L
Z
)
I
D
S
=12mA Typ.
=Z
L
=50Ω
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
12
OIP
1dB
3
3
Tone Spacing=1MHz, P
-40 to +85
Rating
Class 0
+150
+150
+12
24
6
Unit
dBm
dBm
dB
dB
dB
dB
dB
OUT
Unit
dBm
per tone=-20dBm
mA
°C
°C
°C
V
MHz
100
12.0
25.2
12.7
47.8
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
MHz
500
11.8
33.9
12.0
57.0
-3.8
8.7
3.1
R
Caution! ESD sensitive device.
BIAS
=300Ω
MHz
850
12.5
32.6
11.0
50.4
-3.3
7.9
3.1
1950
MHz
11.5
16.4
33.5
-4.6
6.3
3.4
7.0
2400
MHz
11.4
18.3
30.8
-4.4
5.7
5.6
3.4
DS090924
3500
MHz
28.3
11.5
10.9
7.3