SGA-1263 Sirenza Microdevices Inc, SGA-1263 Datasheet

SGA-1263

Manufacturer Part Number

SGA-1263

Description

IC AMP HBT SIGE 4000MHZ SOT-363

Manufacturer

Sirenza Microdevices Inc

Datasheet

1.SGA-1263Z.pdf (6 pages)

Specifications of SGA-1263

Current - Supply

6mA ~ 10mA

Frequency

0Hz ~ 4GHz

Gain

15.2dB

Noise Figure

2.9dB @ 1GHz ~ 2.4GHz

P1db

-7.4dBm

Package / Case

SC-70-6, SC-88, SOT-363

Rf Type

ISM, PCS

Test Frequency

1.95GHz

Voltage - Supply

2.5V ~ 3.1V

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

SGA-1263

Quantity:

3 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SGA-1263Z

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SGA-1263Z-EVB1

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SGA-1263ZSB

Manufacturer:

HITTITE

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SGA-1263ZSQ

Manufacturer:

RFMD

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SGA-1263ZSR

Manufacturer:

RFMD

Quantity:

5 000

Current page: 1 of 6
Download datasheet (528Kb)

Product Description

RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar

Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain

response for application to 4GHz. This RFIC is a 2-stage design that pro-

vides high isolation of up to 40dB at 2GHz and is fabricated using the lat-

est SiGe HBT 50GHz F

drift over 125°C operating range (-40°C to +85°C) and are ideal for use

DS090924

Small Signal Gain

Output Power at 1dB Compression

Output Third Order Intercept Point

Determined by Return Loss (<-10dB)

Input Return Loss

Output Return Loss

Noise Figure

Device Voltage

Thermal Resistance

Test Conditions: V

Optimum Technology

CEO

Matching® Applied

LDMOS

GaAs HBT

GaAs MESFET

InGaP HBT

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

InP HBT

RF MEMS

>7V. These unconditionally stable amplifiers have less than 1dB gain

Parameter

=5V, I

RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-

mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.

as buffer amplifiers in oscillator applications covering

cellular, ISM, and narrowband PCS bands.

=8mA Typ., OIP3 Tone Spacing=1MHz, P

-2 0

-4 0

-6 0

-8 0

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SGA-1263(Z)

DCto4000MH

z Silicon Ger-

manium HBT

Cascadable

Gain Block

process, featuring one-micron emitters with

Min.

-13.0

-1.5

9.5

2.5

Isolation vs. Frequency

Specification

Frequency MHz

Typ.

11.2

-9.5

255

1.0

2.5

2.8

OUT

per tone=-20dBm, R

Max.

4.0

3.1

DCto4000MHz SILICON GERMANIUM HBT

°C/W

Unit

dBm

MHz

BIAS

=270Ω, T

850MHz

1950MHz

Features

Applications

CASCADABLE GAIN BLOCK

=25°C, Z

DCto400MHz Operation

Single Supply Voltage

Excellent Isolation, >50dB at

900MHz

50W In/Out, Broadband

Match for Operation from DC-

Unconditionally Stable

Buffer Amplifier for Oscillator

Applications

Broadband Gain Blocks

IF Amp

4GHz

SGA-1263(Z)

Condition

=50Ω

Package: SOT-363

1 of 6

Related parts for SGA-1263

SGA-1263 Summary of contents

Page 1

... Cascadable Gain Block Product Description RFMD’s SGA-1263( Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that pro- vides high isolation 40dB at 2GHz and is fabricated using the lat- ...

Page 2

... SGA-1263(Z) Absolute Maximum Ratings Parameter Max Device Current (ID) Max Device Voltage (VD) Max RF Input Power Max Junction Temperature (TJ) Operating Temperature Range (TL) Max Storage Temperature Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one ...

Page 3

... RFMD at (+1) 336-678-5570 or sales-support@rfmd.com. DS090924 68pF 1uF 100pF 100pF 1,2,5 1uF 22pF 68pF 68pF 1,2,5 Recommended Bias Resistor Values Supply 3.6V 5V 7.5V 9V 12V Voltage(Vs) Rbias 100 275 588 775 1150 (Ohms) SGA-1263(Z) 270 ohms V =+ ohm microstrip 270 ohms V =+ ohm microstrip ...

Page 4

... SGA-1263(Z) S21 mA, T=+25C Frequency MHz S11 mA, T=+25C Frequency MHz S11, Id=8 mA, Ta= +25C 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com S12 mA, T=+25C Frequency MHz S22 mA, T=+25C Frequency MHz S22, Id=8 mA, Ta= +25C Freq ...

Page 5

... Dimensions given for 50 Ohm RF I/O lines are for 31 mil thick Getek. Scale accordingly for different board thicknesses and dielectric contants recommend ounce copper. Measure- ments for this data sheet were made mil thick Getek with 1 ounce copper on both sides. SGA-1263( ...

Page 6

... RoHS Compliant part will be indicated with a “12Z” part marking. Alternate Marking with Trace Code Only Part Number Description SGA-1263 Tin-Lead SGA-1263Z Lead Free, RoHS Compliant 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com Part Identification Marking ...

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