SGA-4386 Sirenza Microdevices Inc, SGA-4386 Datasheet - Page 2

• Manufacturer Part Number: SGA-4386
• Description: IC AMP HBT SIGE 4500MHZ SOT-86
• Manufacturer: Sirenza Microdevices Inc

Specifications of SGA-4386

• Current - Supply: 41mA ~ 49mA
• Frequency: 0Hz ~ 4.5GHz
• Gain: 14.6dB
• Noise Figure: 3.1dB
• P1db: 13dBm
• Package / Case: SOT-86
• Rf Type: Cellular, GSM, PCS, UMTS
• Test Frequency: 1.95GHz
• Voltage - Supply: 2.9V ~ 3.5V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

SGA-4386(Z)
Typical Performance at Key Operating Frequencies
2 of 6
Absolute Maximum Ratings
Max Device Current (I
Max Device Voltage (V
Max RF Input Power
Max Junction Temp (T
Operating Temp Range (T
Max Storage Temp
Operation of this device beyond any one of these limits may cause permanent dam-
Bias Conditions should also satisfy the following expression:
Test Conditions: V
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
I
D
V
D
<(T
J
Parameter
-T
Output Power at 1dB Compression
Output Third Order Intercept Point
L
)/R
35
30
25
20
15
S
TH
=8V, I
0
Output Return Loss
, j-l
Small Signal Gain
Input Return Loss
D
J
Reverse Isolation
D
)
)
Parameter
)
Noise Figure
D
L
)
0.5
=45mA Typ., OIP
V
D
OIP
=3.2 V, I
1
Frequency (GHz)
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support, contact RFMD at ([phone] or [e-mail].
3
vs. Frequency
D
= 45 mA (Typ.)
1.5
3
Tone Spacing=1MHz, P
-40 to +85
Rating
2
+150
+150
+18
5
4
3
2
1
0
90
5
T
0
L
=+25ºC
2.5
Noise Figure vs. Frequency
0.5
Unit
dBm
dBm
V
dB
dB
dB
dB
dB
3
D
OUT
= 3.2 V, I
per tone=-5dBm, R
1
Frequency (GHz)
Unit
dBm
mA
°C
°C
°C
V
MHz
100
12.5
10.6
21.3
17.9
D
= 45 mA (Typ.)
1.5
18
15
12
9
6
0
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
2
MHz
500
29.1
14.8
12.5
11.4
21.5
17.4
BIAS
2.8
0.5
T
=110Ω, T
L
V
=+25ºC
Caution! ESD sensitive device.
2.5
D
= 3.2 V, I
P
1dB
1
Frequency (GHz)
MHz
vs. Frequency
850
28.9
15.3
12.8
12.9
21.6
17.0
2.9
L
=25°C, Z
3
D
1.5
= 45 mA (Typ.)
1950
S
MHz
2
=Z
14.6
26.9
13.0
13.2
15.2
20.8
3.1
L
T
=50Ω
L
=+25ºC
2.5
2400
MHz
13.7
25.9
11.9
12.4
15.2
19.9
3.4
EDS-100641 Rev H
3
3500
MHz
11.8
10.9
15.0
17.3