MW4IC001NR4 Freescale Semiconductor, MW4IC001NR4 Datasheet - Page 2

• Manufacturer Part Number: MW4IC001NR4
• Description: IC RF PWR AMP 26V 900MW 1.5-PLD
• Manufacturer: Freescale Semiconductor
• Type: Power Amplifierr

Specifications of MW4IC001NR4

• Current - Supply: 12mA
• Frequency: 800MHz ~ 2.1GHz
• Gain: 13dB
• P1db: 850mW
• Package / Case: PLD-1.5
• Rf Type: Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
• Test Frequency: 2.17GHz
• Voltage - Supply: 26V
• Number Of Channels: 1
• Frequency (max): 2.17GHz
• Power Supply Requirement: Single
• Single Supply Voltage (min): 26V
• Single Supply Voltage (max): 28V
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Pin Count: 3
• Mounting: Surface Mount
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Output Capacitance
Reverse Transfer Capacitance
Two - Tone Common Source Amplifier Power Gain
Two - Tone Drain Efficiency
Third Order Intermodulation Distortion
Input Return Loss
Output Power, 1 dB Compression Point, CW
Common - Source Amplifier Power Gain
Drain Efficiency
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
f = 2170 MHz, Tone Spacing = 100 kHz)
(V
f = 2170 MHz, Tone Spacing = 100 kHz)
(V
f = 2170 MHz, Tone Spacing = 100 kHz)
(V
f = 2170 MHz, Tone Spacing = 100 kHz)
(V
(V
(V
(V
DS
DS
GS
DS
DS
GS
DS
DS
DS
DD
DD
DD
DD
DD
DD
DD
DD
= 65 Vdc, V
= 28 Vdc, V
= 10 V, I
= 28 V, I
= 10 V, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 V, I
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, I
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
D
D
D
D
= 50 μA)
= 10 mA)
= 0.1 A)
= 0.05 A)
DS
DQ
GS
GS
out
out
out
out
out
out
out
= 0 Vdc)
= 12 mA, f = 2170 MHz)
= 0 Vdc)
= 0 Vdc)
= 0.9 W PEP, I
= 0.9 W PEP, I
= 0.9 W PEP, I
= 0.9 W PEP, I
= 0.9 W CW, I
= 0.9 W CW, I
= 0.9 W CW, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
(T
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
= 12 mA, f = 2170 MHz)
= 12 mA,
= 12 mA,
= 12 mA,
= 12 mA,
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
Symbol
V
V
V
P1dB
I
I
I
C
DS(on)
C
IMD
GS(th)
GS(Q)
G
G
IRL
IRL
DSS
DSS
GSS
g
η
η
oss
rss
fs
ps
D
ps
D
Min
- 10
12
35
—
—
—
—
—
—
—
—
—
—
—
—
2
2
0.48
0.05
0.62
0.85
Typ
- 28
- 18
- 16
3.7
45
13
29
13
38
—
—
—
3
Max
0.9
10
10
—
—
—
—
—
—
—
—
—
—
—
1
5
5
MW4IC001MR4
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
pF
pF
dB
dB
dB
dB
%
W
%
S
13