SI4712-B30-GM Silicon Laboratories Inc, SI4712-B30-GM Datasheet - Page 4

• Manufacturer Part Number: SI4712-B30-GM
• Description: IC TX FM RADIO W/RPS 20UQFN
• Manufacturer: Silicon Laboratories Inc

Specifications of SI4712-B30-GM

• Frequency: 76MHz ~ 108MHz
• Applications: General Purpose
• Modulation Or Protocol: FM
• Current - Transmitting: 18.8mA
• Data Interface: PCB, Surface Mount
• Antenna Connector: PCB, Surface Mount
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 20-UQFN, 20-µQFN
• Operating Supply Voltage (typ): 3.3/5V
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 5.5V
• Operating Temp Range: -20C to 85C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 20
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Features: -
• Power - Output: -
• Memory Size: -
• Data Rate - Maximum: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Si4712/13-B30
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Table 2. Absolute Maximum Ratings
4
Supply Voltage
Interface Supply Voltage
Power Supply Powerup Rise Time
Interface Supply Powerup Rise
Time
Ambient Temperature
Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Supply Voltage
Interface Supply Voltage
Input Current
Input Voltage
Operating Temperature
Storage Temperature
RF Input Level
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
2. The Si4712/13 devices are high-performance RF integrated circuits with certain pins having an ESD rating of < 2 kV
3. For input pins SCLK, SEN, SDIO, RST, RCLK, DCLK, DFS, DIN, GPO1, GPO2/INT, and GPO3.
4. At RF input pin, TXO.
Typical values apply at V
otherwise stated.
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
Parameter
3
3
Parameter
4
DD
= 3.3 V and 25 °C unless otherwise stated. Parameters are tested in production unless
V
Symbol
V
DDRISE
IORISE
V
V
T
DD
1,2
IO
A
Symbol
T
V
T
V
V
I
STG
OP
DD
IN
IO
IN
Rev. 1.1
Test Condition
–0.3 to (V
–0.5 to 5.8
–0.5 to 3.9
–55 to 150
–40 to 95
Value
0.4
10
Min
–20
2.7
1.5
10
10
IO
+ 0.3)
Typ
25
—
—
—
—
Max
5.5
3.6
85
—
—
Unit
V
mA
°C
°C
V
V
V
PK
Unit
µs
µs
°C
V
V