M24LR64-RDW6T/2 STMicroelectronics, M24LR64-RDW6T/2 Datasheet - Page 116

no-image

M24LR64-RDW6T/2

Manufacturer Part Number
M24LR64-RDW6T/2
Description
13.56MHZ 64KBIT EEPROM 8 TSSOP
Manufacturer
STMicroelectronics
Datasheets

Specifications of M24LR64-RDW6T/2

Featured Product
STM32 Cortex-M3 Companion Products
Rf Type
Read / Write
Frequency
13.56MHz
Features
64 Kbit EEPROM
Package / Case
8-TSSOP
Memory Size
64 KB
Organization
2 K x 32
Interface Type
I2C
Maximum Clock Frequency
400 KHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.8 V
Maximum Operating Current
600 uA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10487-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M24LR64-RDW6T/2
Manufacturer:
ST
0
RF electrical parameters
29
Table 105. RF characteristics
116/128
H_Extende
MI
MI
t
t
RFR
RFR
Symbol
t
H_ISO
t
t
MIN CD
CARRIER
CARRIER
RFSBL
RFSBL
f
f
f
W
CC
SH
SL
t
t
d
, t
, t
1
2
t
RFF
RFF
RF electrical parameters
This section summarizes the operating and measurement conditions, and the DC and AC
characteristics of the device in RF mode. The parameters in the DC and AC Characteristic
tables that follow are derived from tests performed under the Measurement Conditions
summarized in the relevant tables. Designers should check that the operating conditions in
their circuit match the measurement conditions when relying on the quoted parameters.
External RF signal frequency
Operating field according
to ISO
Operating field in extended
temperature range
10% carrier modulation
index
MI=(A-B)/(A+B)
10% rise and fall time
10% minimum pulse width
for bit
100% carrier modulation index
100% rise and fall time
100% minimum pulse width
for bit
Minimum time from carrier
generation to first data
Subcarrier frequency high
Subcarrier frequency low
Time for M24LR64-R response 4224/F
Time between commands
RF write time (including
internal Verify)
(3) (4)
Parameter
(1) (2)
Doc ID 15170 Rev 12
T
T
150 mA/m > H_ISO > 1000 mA/m
H_ISO > 1000 mA/m
MI=(A-B)/(A+B)
From H-field min
F
F
4224/F
A
A
CC
CC
= 0 °C to 50 °C
= –40 °C to 85 °C
/32
/28
S
S
Condition
150
150
13.553 13.56 13.567
318.6
Min
309
0.5
7.1
0.5
7.1
15
10
95
423.75
484.28
320.9
311.5
5.75
Typ
0.1
5000
3500
323.3
Max
9.44
9.44
100
314
3.0
3.5
30
30
M24LR64-R
1
mA/m
mA/m
MHz
Unit
kHz
kHz
ms
ms
µs
µs
µs
µs
µs
µs
%
%

Related parts for M24LR64-RDW6T/2