T40HFL60S02 Vishay, T40HFL60S02 Datasheet - Page 12

DIODE FAST REC 600V 40A D-55

T40HFL60S02

Manufacturer Part Number
T40HFL60S02
Description
DIODE FAST REC 600V 40A D-55
Manufacturer
Vishay
Datasheet

Specifications of T40HFL60S02

Current - Reverse Leakage @ Vr
100µA @ 600V
Current - Average Rectified (io) (per Diode)
40A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
200ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
Single
Mounting Type
Chassis Mount
Package / Case
D-55
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.6 V
Recovery Time
200 ns
Forward Continuous Current
40 A
Max Surge Current
500 A
Reverse Current Ir
100 uA
Mounting Style
Screw
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
40A
Forward Voltage Vf Max
1.6V
Module Configuration
Single
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Forward (vf) (max) @ If
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*T40HFL60S02
T40HFL, T70HFL, T85HFL Series
Vishay Semiconductors
www.vishay.com
12
1E4
1E3
1E2
1E1
1E4
1E3
1E2
1E1
1E 4
1E 3
1E 2
1E 1
1E 0
1E1
1E 1
1E1
20000
20000
tp
tp
tp
10000
10000
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T 85HFL.. S eries
S inusoidal Pulse
T = 70°C
T 85HFL.. S eries
S inusoidal Pulse
T = 90°C
C
C
T 85HFL.. S eries
S inusoidal Pulse
T = 125 °C
For technical questions within your region, please contact one of the following:
J
5000
5000
1E 2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.01
2500
2500
0.02
Fig. 45 - Maximum Forward Energy Power Loss Characteristics
0.04
1500
1500
0.1
0.2
1000
1000
0.4
(T-Modules), 40 A/70 A/85 A
1
2
1E 3
1E3
1E3
4
400
400
Fig. 43 - Frequency Characteristics
Fig. 44 - Frequency Characteristics
10
Fast Recovery Diodes
20 joules per pulse
200
200
50 Hz
50 Hz
1E4
1E4
1E4
1E 4
1E4
1E4
1E1
1E1
1E 1
1E 1
1E1
1E1
tp
tp
tp
T rapezoid al Pulse
T 85HFL.. S eries
T = 125°C
di/dt = 50A/ µs
T rapezoidal Pulse
T 85HFL.. S eries
T = 70°C
T rapezoidal Pulse
T 85HFL.. S eries
T = 90°C
J
DiodesEurope@vishay.com
C
C
5000
5000
0.01
1E2
1E2
1E 2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
0.02
2500
2500
0.04
0.1
1500
1500
0.2
0.4
1000
1000
1
2
1E3
1E 3
1E3
4
400
10
400
20 joules per pulse
200
200
Document Number: 93184
50 Hz
50 Hz
Revision: 19-May-10
1E 4
1E 4
1E 4

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