CM600DU-24NF Powerex Inc, CM600DU-24NF Datasheet - Page 2
CM600DU-24NF
Manufacturer Part Number
CM600DU-24NF
Description
IGBT MOD DUAL 1200V 600A NF SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Type
IGBT Moduler
Datasheet
1.CM600DU-24NF.pdf
(4 pages)
Specifications of CM600DU-24NF
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.65V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
140nF @ 10V
Power - Max
2080W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Distributorinventory
View
Voltage
1200V
Current
600A
Circuit Configuration
Dual
Rohs Compliant
Yes
For Use With
BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
835-1022
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CM600DU-24NF
Manufacturer:
RFMD
Quantity:
1 001
Part Number:
CM600DU-24NF
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Company:
Part Number:
CM600DU-24NF#300G
Manufacturer:
PT
Quantity:
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Part Number:
CM600DU-24NF#300G
Manufacturer:
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Quantity:
20 000
Part Number:
CM600DU-24NFH
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM600DU-24NFH
Quantity:
55
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600DU-24NF
Dual IGBTMOD™ NF-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current*** (DC, T
Peak Collector Current
Emitter Current** (T
Peak Emitter Current**
Maximum Collector Dissipation (T
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Gate Emitter Terminal Torque, M4 Mounting
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Emitter-Collector Voltage**
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Time
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
*Pulse width and repetition rate should be such that device junction temperature (T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***T
C´
measured point is just under the chips. If this value is used, R
C
= 25°C)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C´
= 109°C)
C
= 25°C, T
j
= 25 °C unless otherwise specified
j
j
≤ 150°C)
= 25 °C unless otherwise specified
V
V
Symbol
Symbol
CE(sat)
t
t
I
I
C
GE(th)
C
V
C
d(on)
d(off)
GES
CES
Q
j
Q
t
oes
EC
t
ies
res
t
= 25 °C unless otherwise specified
rr
r
f
G
rr
th(f-a)
V
I
I
C
CC
V
C
GE1
= 600A, V
= 600A, V
should be measured just under the chips.
= 600V, I
V
V
V
I
C
V
I
CC
Switching Operation,
CE
GE
= V
E
CE
= 60mA, V
= 600A, V
Inductive Load
Test Conditions
Test Conditions
= 600V, I
GE2
= V
= V
j
) does not exceed T
= 10V, V
I
GE
E
GE
C
CES
GES
= 600A
= 15V, R
= 600A, V
= 15V, T
= 15V, T
, V
, V
CE
C
GE
GE
GE
CE
= 600A,
= 10V
= 0V
= 0V
G
= 0V
= 0V
j
j
GE
= 125°C
= 1.0Ω,
= 25°C
Symbol
V
V
V
T
I
j(max)
I
= 15V
GES
P
CES
CM
EM
I
—
—
—
T
I
ISO
stg
–
C
E
C
j
rating.
Min.
Min.
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM600DU-24NF
–40 to 150
–40 to 125
1200*
1200*
1200
2080
1200
2500
±20
600
600
95
40
15
4000
1.95
2.15
Typ.
Typ.
7.0
28
—
—
—
—
—
—
—
—
—
—
—
Max.
2.65
3.35
Max.
140
800
180
900
350
300
1.0
0.5
8.0
—
—
—
12
2.7
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Volts
Volts
Volts
Units
in-lb
in-lb
in-lb
°C
°C
Volts
Volts
Volts
Volts
Units
Units
mA
µA
nC
µC
ns
ns
ns
ns
ns
nf
nf
nf