CM600HA-24H Powerex Inc, CM600HA-24H Datasheet - Page 2

IGBT MOD SGL 1200V 600A H SER

CM600HA-24H

Manufacturer Part Number
CM600HA-24H
Description
IGBT MOD SGL 1200V 600A H SER
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM600HA-24H

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
120nF @ 10V
Power - Max
4100W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Transistor Polarity
N Channel
Dc Collector Current
600A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
4.1kW
Collector Emitter Voltage V(br)ceo
3.4V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
835-1097
CM600HA-24H

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194
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HA-24H
Single IGBTMOD™ H-Series Module
600 Amperes/1200 Volts
Absolute Maximum Ratings, T
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
Max. Mounting Torque M8 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Total Gate Charge
Diode Forward Voltage
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
j
= 25 C unless otherwise specified
j
= 25 C unless otherwise specified
V
V
Symbol
Symbol
Symbol
R
R
R
CE(sat)
t
t
I
I
C
GE(th)
V
C
C
d(on)
d(off)
GES
th(c-f)
CES
Q
j
th(j-c)
th(j-c)
Q
t
oes
FM
res
t
ies
t
= 25 C unless otherwise specified
rr
G
r
f
rr
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
V
I
C
CC
V
V
I
I
E
E
GE
GE1
= 600A, V
= 600V, I
= 600A, di
= 600A, di
V
V
V
I
I
C
= 0V, V
C
CC
I
CE
GE
E
= V
= 60mA, V
= 600A, V
= 600A, V
Test Conditions
Test Conditions
Test Conditions
= V
= 600V, I
= V
GE2
Per FWDi
Per IGBT
GE
C
CE
CES
GES
E
E
= 600A, V
= 15V, R
/dt = –1200A/ s
/dt = –1200A/ s
= 15V, T
= 10V, f = 1MHz
, V
, V
GE
CE
C
GS
GE
CE
= 600A,
= 15V
= 10V
= 0V
G
= 0V
= 0V
j
GS
= 150 C
= 2.1
Symbol
V
V
V
T
I
I
= 15V
RMS
CES
GES
P
CM
FM
I
T
I
stg
C
F
d
j
Min.
Min.
Min.
4.5
CM600HA-24H
–40 to 150
–40 to 125
1200*
1200*
1200
4100
2500
600
600
560
95
26
3000
20
2.25
4.46
Typ.
Typ.
Typ.
6.0
2.5
0.035
Max.
3.4**
Max.
Max.
0.035
0.06
120
300
700
450
350
250
2.0
0.5
7.5
3.5
24
42
Amperes
Amperes
Amperes
Amperes
Grams
Watts
Units
Volts
Volts
Volts
in-lb
in-lb
Units
Volts
Volts
Volts
Volts
Units
Units
C
C
mA
C/W
C/W
C/W
nC
nF
nF
nF
ns
ns
ns
ns
ns
A
C

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