CM75DU-24H Powerex Inc, CM75DU-24H Datasheet - Page 3

• Manufacturer Part Number: CM75DU-24H
• Description: IGBT MOD DUAL 1200V 75A U SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM75DU-24H

• Package / Case: Module
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 11nF @ 10V
• Power - Max: 600W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 450W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
CM75DU-24F
Trench Gate Design Dual IGBTMOD™
75 Amperes/1200 Volts
Dynamic Electrical Characteristics,T j = 25°C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T j = 25°C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R th(j-c) 'Q
R th(j-c) Q
R th(j-c) D
R th(c-f)
Symbol
Symbol
t d(on)
t d(off)
C oes
C res
C ies
Q rr
t rr
t r
t f
Per Module, Thermal Grease Applied
Per FWDi 1/2 Module, T c Reference
Per IGBT 1/2 Module, T c Reference
T c Reference Point Under Chip
Point per Outline Drawing
Point per Outline Drawing
V CC = 600V, I C = 75A,
V CE = 10V, V GE = 0V
Per IGBT 1/2 Module,
V GE1 = V GE2 = 15V,
Switching Operation
Inductive Load
Test Conditions
Test Conditions
R G = 4.2,
I E = 75A
Min.
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
Typ.
–
–
–
–
–
–
–
–
3.1
–
0.19
0.045
100
400
300
150
29
50
Max.
Max.
1.3
0.75
–
0.28
0.47
–
Units
Units
°C/W
°C/W
°C/W
°C/W
μC
ns
ns
ns
ns
ns
nf
nf
nf
3