CM75RX-24A Powerex Inc, CM75RX-24A Datasheet - Page 4

• Manufacturer Part Number: CM75RX-24A
• Description: IGBT MOD 7PAC 1200V 75A NX SER
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of CM75RX-24A

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 75A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 11.5nF @ 10V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 10mW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• No. Of Pins: 22
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

4
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM75RX-24A
Six IGBTMOD™ + Brake NX-Series Module
75 Amperes/1200 Volts
Electrical and Mechanical Characteristics, T
Brake Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Repetitive Reverse Current*
Forward Voltage Drop *
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
NTC Thermistor Sector, T
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**T
***R1: Resistance at Absolute Temperature T
C
, T
f
measured point is just under the chips.
j
= 25°C unless otherwise specified
1
(K), R
R
V
R
2
B
V
Symbol
Symbol
Symbol
R
: Resistance at Absolute Temperature T
CE(sat)
R
I
th(j-c)
th(j-c)
∆R/R
I
I
C
(25/50)
GE(th)
C
C
RRM
GES
P
CES
Q
th(j-f)
R
V
Gint
oes
R
res
ies
25
G
G
F
Q
D
j
j
= 25°C unless otherwise specified
= 25°C unless otherwise specified
B = (InR
V
CC
I
C
I
T
C
Thermal Grease Applied
= 600V, I
C
= 50A, V
I
V
= 50A, V
C
V
V
= 100°C, R
CE
1
= 50A, V
CE
GE
I
I
F
– InR
I
Test Conditions
Test Conditions
F
F
Test Conditions
= 10V, V
V
= 50A, T
T
T
T
= 50A, T
Per FWDi
= V
= 50A, Chip
Per IGBT
= V
R
C
C
C
C
GE
I
= V
C
GE
2
= 25°C
= 25°C
= 25°C
CES
GES
= 50A, V
) / (1/T
= 5mA
GE
= 15V, T
RRM
= 15V, T
100
GE
, V
j
2
, V
j
= 15V, Chip
(K), T(K) = t(°C) + 273.15
= 125°C
= 25°C
GE
CE
= 493Ω
= 0V
1
GE
– 1/T
= 0V
= 0V
j
j
= 125°C
= 25°C
= 15V
2
)***
Min.
Min.
Min.
4.85
–7.3
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—
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6
6
0.015
3375
2.16
5.00
Typ.
Typ.
250
Typ.
2.0
2.2
2.6
2.5
1.9
—
—
—
—
—
—
—
—
—
—
—
7
0
Max.
Max.
Max.
0.75
0.17
0.35
0.63
5.15
+7.8
1.0
0.5
2.6
8.5
1.0
3.4
62
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10
8
Rev. 11/08
°C/W
°C/W
°C/W
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Units
Units
mW
mA
mA
nC
µA
nF
nF
nF
kΩ
%
Ω
Ω
K